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KSA709-CG PDF预览

KSA709-CG

更新时间: 2024-11-09 13:01:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
4页 39K
描述
Small Signal Bipolar Transistor, 0.7A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

KSA709-CG 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.77
Is Samacsys:N最大集电极电流 (IC):0.7 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):200JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):50 MHzBase Number Matches:1

KSA709-CG 数据手册

 浏览型号KSA709-CG的Datasheet PDF文件第2页浏览型号KSA709-CG的Datasheet PDF文件第3页浏览型号KSA709-CG的Datasheet PDF文件第4页 
KSA709  
High Voltage Amplifier  
Collector-Base Voltage : V  
Collector Power Dissipation : P =800mW  
Complement to KSC1009  
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)  
= -160V  
CBO  
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-160  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-150  
V
CEO  
EBO  
-8  
V
I
-700  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
800  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-160  
-150  
-8  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I = -100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -10mA, I =0  
C B  
I = -100µA, I =0  
V
E
C
I
I
V
= -100V, I =0  
-0.1  
-0.1  
400  
-0.4  
-1.0  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
E
Emitter Cut-off Current  
V
V
= -5V, I =0  
C
h
* DC Current Gain  
= -2V, I = -50mA  
70  
FE  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -200mA, I = -20mA  
-0.3  
-0.9  
50  
V
V
CE  
BE  
C
B
I = -200mA, I = -20mA  
C
B
f
V
= -10V, I = -50mA  
MHz  
pF  
T
CE  
CB  
C
C
V
= -10V, I =0, f=1MHz  
10  
ob  
E
* Pulse Test: PW350µs, Duty cycle2%  
h
Classification  
FE  
Classification  
O
Y
G
h
70 ~ 140  
120 ~ 240  
200 ~ 400  
FE  
©2004 Fairchild Semiconductor Corporation  
Rev. B1, April 2004  

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