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KSA1614YTU PDF预览

KSA1614YTU

更新时间: 2024-09-29 19:50:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网放大器晶体管
页数 文件大小 规格书
4页 46K
描述
Power Bipolar Transistor, 3A I(C), 55V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN

KSA1614YTU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220F
包装说明:TO-220F, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.83外壳连接:ISOLATED
最大集电极电流 (IC):3 A集电极-发射极最大电压:55 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:PNP
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

KSA1614YTU 数据手册

 浏览型号KSA1614YTU的Datasheet PDF文件第2页浏览型号KSA1614YTU的Datasheet PDF文件第3页浏览型号KSA1614YTU的Datasheet PDF文件第4页 
KSA1614  
Low Frequency Power Amplifier  
Power Regulator  
Collector-Base Voltage : V  
= - 80V  
CBO  
Collector Dissipation : P =20W (T =25°C)  
C
C
TO-220F  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
- 80  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
- 55  
V
CEO  
EBO  
- 5  
V
I
- 3  
A
C
P
Collector Dissipation (T =25°C)  
20  
W
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I
I
= - 500µA, I = 0  
- 80  
- 55  
- 5  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
= - 10mA, I = 0  
B
C
I = - 500µA, I = 0  
V
E
C
I
V
= - 50V, I = 0  
- 50  
240  
µA  
CBO  
CB  
CE  
B
h
DC Current Gain  
V
= - 5V, I = - 0.5A  
40  
FE  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I
= - 1A, I = - 0.1A  
- 0.15  
- 0.5  
V
BE  
C
B
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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