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KSA1943O PDF预览

KSA1943O

更新时间: 2024-02-14 23:00:53
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网放大器晶体管
页数 文件大小 规格书
6页 98K
描述
Power Bipolar Transistor, 13A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin, TO-264, 3 PIN

KSA1943O 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-264包装说明:TO-264, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.78
最大集电极电流 (IC):13 A集电极-发射极最大电压:230 V
配置:SINGLE最小直流电流增益 (hFE):80
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:PNP
最大功率耗散 (Abs):150 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):30 MHz
Base Number Matches:1

KSA1943O 数据手册

 浏览型号KSA1943O的Datasheet PDF文件第2页浏览型号KSA1943O的Datasheet PDF文件第3页浏览型号KSA1943O的Datasheet PDF文件第4页浏览型号KSA1943O的Datasheet PDF文件第5页浏览型号KSA1943O的Datasheet PDF文件第6页 
KSA1943  
Audio Power Amplifier  
High Current Capability I = -13A  
High Power Dissipation  
Wide S.O.A  
C
Complement to KSC5200  
TO-264  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Ratings  
-230  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CBO  
-230  
CEO  
EBO  
-5  
V
I
I
-13  
A
C
Base Current  
-1.5  
A
B
P
Collector Dissipation (T =25°C)  
130  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 50 ~ 150  
STG  
Electrical CharacteristicsT =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
I =-5mA, I =0  
Min.  
Typ.  
Max.  
Units  
BV  
-230  
-230  
-5  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =-10mA, R =∞  
C BE  
I =-5mA, I =0  
V
E
C
I
I
V
=-230V, I =0  
-5.0  
-5.0  
160  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
CE  
E
Emitter Cut-off Current  
V
V
V
=-5V, I =0  
C
h
h
* DC Current Gain  
=-5V, I =-1A  
55  
35  
FE1  
FE2  
C
DC Current Gain  
=-5V, I =-7A  
60  
-0.4  
-1.0  
30  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =-8A, I =-0.8A  
-3.0  
-1.5  
V
V
CE  
C
B
V
=-5V, I =-7A  
C
BE  
CE  
CE  
CB  
f
V
V
=-5V, I =-1A  
MHz  
pF  
T
C
C
=-10V, f=1MHz  
360  
ob  
* Pulse Test : PW=20us  
*h Classification  
FE  
Classification  
R
O
h
55 ~ 110  
80 ~ 160  
FE1  
©2001 Fairchild Semiconductor Corporation  
Rev. B1, Septmeber 2001  

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