Datasheet > KSA1962R

KSA1962R

更新时间： 2024-01-07 22:43:58

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	85K
描述
Power Bipolar Transistor, 10A I(C), 230V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

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KSA1962R 数据手册

KSA1962

Audio Power Amplifier

•

High Current Capability : I = -10A

High Collector-Emitter Breakdown Voltage : BV

High Power Dissipation

Wide S.O.A

Complement to KSC5242

=230V (Min.)

CEO

TO-3P

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Ratings

-230

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Base Current

CBO

-230

CEO

EBO

-5

-10

-1.5

Collector Dissipation (T =25°C)

100

°C

Junction Temperature

Storage Temperature

150

- 50 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

I =-5mA, I =0

-230

-5

CBO

CEO

EBO

I =-10mA, R =∞

C BE

I =-5mA, I =0

=-230V, I =0

-5.0

160

µA

CBO

EBO

Emitter Cut-off Current

=-5V, I =0

* DC Current Gain

=-5V, I =-1A

FE1

FE2

DC Current Gain

=-5V, I =-7A

-0.4

-1.0

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

I =-8A, I =-0.8A

-3.0

-1.5

=-5V, I =-7A

=-5V, I =-1A

MHz

=-10V, f=1MHz

360

* Pulse Test : PW=20us

* h Classification

Classification

55 ~ 110

80 ~ 160

FE1

Rev. B1, Septmeber 2001

12 3 4 5

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