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KN4A3Q-AZ

更新时间: 2024-01-10 18:37:32
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
22页 379K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, USM, SC-75, 3 PIN

KN4A3Q-AZ 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-75
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.55
其他特性:BUILT IN BIAS RESISTOR RATIO 10最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):80JESD-30 代码:R-PDSO-G3
JESD-609代码:e6元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:TIN BISMUTH
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

KN4A3Q-AZ 数据手册

 浏览型号KN4A3Q-AZ的Datasheet PDF文件第2页浏览型号KN4A3Q-AZ的Datasheet PDF文件第3页浏览型号KN4A3Q-AZ的Datasheet PDF文件第4页浏览型号KN4A3Q-AZ的Datasheet PDF文件第5页浏览型号KN4A3Q-AZ的Datasheet PDF文件第6页浏览型号KN4A3Q-AZ的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
KN4xxx  
RESISTOR BUILT-IN TYPE PNP TRANSISTOR  
FEATURES  
PACKAGE DRAWING (Unit: mm)  
Compact package  
Resistors built-in type  
Complementary to KA4xxx  
+0.1  
–0  
0.3  
+0.1  
0.15  
–0.05  
3
0 to 0.1  
ORDERING INFORMATION  
PART NUMBER  
2
1
PACKAGE  
+0.1  
0.2  
–0  
KN4xxx  
SC-75 (USM)  
0.6  
0.5  
0.5  
0.75 0.05  
1.0  
1.6 0.1  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current (DC)  
Collector Current (pulse) Note  
Total Power Dissipation  
Junction Temperature  
VCBO  
VCEO  
VEBO  
IC  
60  
50  
V
V
5  
V
EQUIVALENT CIRCUIT  
PIN CONNECTION  
1: Emitter  
0.1  
A
3
IC(pulse)  
PT  
0.2  
A
2: Base  
0.15  
W
°C  
°C  
3: Collector  
2
Tj  
150  
R
1
Storage Temperature  
Tstg  
–55 to +150  
R
2
Note PW 10 ms, Duty Cycle 50%  
1
PART NUMBER  
KN4A4M  
KN4F4M  
KN4L4M  
KN4L3M  
KN4L3N  
MARK  
A7  
R1  
R2  
UNIT  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
PART NUMBER  
KN4L4L  
MARK  
K7  
R1  
R2  
UNIT  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
10.0  
22.0  
47.0  
4.7  
10.0  
22.0  
47.0  
4.7  
47.0  
10.0  
22.0  
47.0  
2.2  
22.0  
B7  
KN4A4Z  
KN4F4Z  
Y7  
C7  
Z7  
D7  
KN4L4Z  
N7  
P7  
E7  
4.7  
10.0  
KN4F3M  
KN4F3P  
KN4F3R  
KN4A4L  
2.2  
10.0  
47.0  
4.7  
KN4L3Z  
F7  
4.7  
Q7  
R7  
S7  
2.2  
KN4A3Q  
KN4A4P  
KN4F4N  
G7  
H7  
1.0  
10.0  
47.0  
47.0  
2.2  
10.0  
22.0  
10.0  
47.0  
X7  
KN4L4K  
T7  
10.0  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D16489EJ3V0DS00 (3rd edition)  
Date Published October 2004 NS CP(K)  
Printed in Japan  
The mark  
shows major revised points.  
2002  

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暂无描述
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, USM, SC