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KMC7D0CN20CA_0812 PDF预览

KMC7D0CN20CA_0812

更新时间: 2024-11-01 11:30:47
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
5页 63K
描述
Common N-Ch Trench MOSFET

KMC7D0CN20CA_0812 数据手册

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SEMICONDUCTOR  
KMC7D0CN20CA  
Common N-Ch Trench MOSFET  
TECHNICAL DATA  
General Description  
Switching regulator and DC-DC Converter applications.  
It’s mainly suitable for Li-ion battery pack.  
C
D
8
5
A
E1  
E
FEATURES  
B
A1  
VDSS=20V, ID=7A.  
1
4
Low Drain to Source On Resistance.  
: RDS(ON)=20.5m (Max.) @ VGS=4.5V  
: RDS(ON)=21.0m (Max.) @ VGS=4.0V  
: RDS(ON)=22.5m (Max.) @ VGS=3.1V  
: RDS(ON)=26.0m (Max.) @ VGS=2.5V  
ESD Protection.  
DIM MILLIMETERS  
A
A1  
B
1.2 MAX  
0.15 MAX  
_
0.28 + 1  
0.65 Typ.  
GAUGE  
PLANE  
C
D
E
_
3.0 + 0.10  
_
6.40 0.20  
+
_
4.40+0.10  
E1  
L
Super High Dense Cell Design.  
_
+
0.50 0.20  
0.25  
L
MAXIMUM RATING (Ta=25  
)
TSSOP-8  
CHARACTERISTIC  
SYMBOL RATING UNIT  
VDSS  
VGSS  
ID *  
Drain to Source Voltage  
Gate to Source Voltage  
20  
12  
V
V
Marking  
Type Name  
DC  
7
28  
Drain Current  
A
IDP  
IS *  
PD *  
Tj  
*
Pulsed  
KMC7D0  
CN20CA  
Source to Drain Diode Current  
Drain Power Dissipation  
1.7  
A
1.5  
W
Ta = 25  
Maximum Junction Temperature  
Storage Temperature Range  
150  
Tstg  
Lot No.  
-55 150  
83.3  
RthJA  
*
Thermal Resistance, Junction to Ambient  
/W  
Note > *Surface Mounted on 1” 1” FR4 Board, t10sec  
PIN CONNECTION (TOP VIEW)  
D
S
1
2
8
7
D
1
2
3
4
8
7
6
5
S
1
1
2
Rg  
Rg  
S
S
3
4
6
5
2
G
G
1
2
2008. 12. 19  
Revision No : 3  
1/5  

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