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KM681002BT-10 PDF预览

KM681002BT-10

更新时间: 2024-11-25 22:39:39
品牌 Logo 应用领域
三星 - SAMSUNG 存储内存集成电路静态存储器光电二极管输出元件输入元件
页数 文件大小 规格书
8页 174K
描述
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.

KM681002BT-10 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP32,.46
针数:32Reach Compliance Code:unknown
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.87Is Samacsys:N
最长访问时间:10 ns其他特性:TTL COMPATIBLE INPUTS/OUTPUTS
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:20.95 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP32,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.01 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.15 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

KM681002BT-10 数据手册

 浏览型号KM681002BT-10的Datasheet PDF文件第2页浏览型号KM681002BT-10的Datasheet PDF文件第3页浏览型号KM681002BT-10的Datasheet PDF文件第4页浏览型号KM681002BT-10的Datasheet PDF文件第5页浏览型号KM681002BT-10的Datasheet PDF文件第6页浏览型号KM681002BT-10的Datasheet PDF文件第7页 
PRELIMINARY  
Preliminary  
PRELIMINARY  
KM681002B, KM681002BI  
CMOS SRAM  
Document Title  
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.  
Operated at Commercial and Industrial Temperature Range.  
Revision History  
RevNo.  
Rev. 0.0  
Rev.1.0  
History  
Remark  
Draft Data  
Initial release with Design Target.  
Design Target  
Preliminary  
Apr. 1st, 1997  
Jun. 1st, 1997  
Release to Preliminary Data Sheet.  
1. Replace Design Target to Preliminary.  
Rev.2.0  
Release to Final Data Sheet.  
2.1. Delete Preliminary  
Feb. 25th, 1998  
Final  
2.2. Delete 32-SOJ-300 package  
2.3. Delete L-version.  
2.4. Delete Data Retention Characteristics and Waveform.  
2.5. Add Capacitive load of the test environment in A.C test load  
2.6. Change D.C characteristics  
Previous spec.  
(8/10/12ns part)  
160/150/140mA  
30mA  
Changed spec.  
Items  
(8/10/12ns part)  
160/155/150mA  
50mA  
Icc  
Isb  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquart ers.  
Rev 2.0  
February 1998  
- 1 -  

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