KM681002BTI-8

更新时间： 2024-11-25 22:47:35

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
8页	174K
描述
128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range.

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数据手册

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KM681002BTI-8 数据手册

PRELIMINARY

Preliminary

PRELIMINARY

KM681002B, KM681002BI

CMOS SRAM

Document Title

128Kx8 Bit High Speed Static RAM(5V Operating), Revolutionary Pin out.

Operated at Commercial and Industrial Temperature Range.

Revision History

RevNo.

Rev. 0.0

Rev.1.0

History

Remark

Draft Data

Initial release with Design Target.

Design Target

Preliminary

Apr. 1st, 1997

Jun. 1st, 1997

Release to Preliminary Data Sheet.

1. Replace Design Target to Preliminary.

Rev.2.0

Release to Final Data Sheet.

2.1. Delete Preliminary

Feb. 25th, 1998

Final

2.2. Delete 32-SOJ-300 package

2.3. Delete L-version.

2.4. Delete Data Retention Characteristics and Waveform.

2.5. Add Capacitive load of the test environment in A.C test load

2.6. Change D.C characteristics

Previous spec.

(8/10/12ns part)

160/150/140mA

30mA

Changed spec.

Items

(8/10/12ns part)

160/155/150mA

50mA

Icc

Isb

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters

of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquart ers.

Rev 2.0

February 1998

- 1 -

12 3 4 5 6 7 8

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