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KM681002AJ-12000 PDF预览

KM681002AJ-12000

更新时间: 2024-11-09 14:51:51
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 171K
描述
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32

KM681002AJ-12000 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ,针数:32
Reach Compliance Code:unknownECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.83
最长访问时间:12 nsJESD-30 代码:R-PDSO-J32
长度:20.95 mm内存密度:1048576 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX8
封装主体材料:PLASTIC/EPOXY封装代码:SOJ
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:3.76 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:J BEND
端子节距:1.27 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

KM681002AJ-12000 数据手册

 浏览型号KM681002AJ-12000的Datasheet PDF文件第2页浏览型号KM681002AJ-12000的Datasheet PDF文件第3页浏览型号KM681002AJ-12000的Datasheet PDF文件第4页浏览型号KM681002AJ-12000的Datasheet PDF文件第5页浏览型号KM681002AJ-12000的Datasheet PDF文件第6页浏览型号KM681002AJ-12000的Datasheet PDF文件第7页 
PRELIMINARY  
KM681002A, KM681002AI  
CMOS SRAM  
Document Title  
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out.  
Operated at Commercial and Industrial Temperature Range.  
Revision History  
Rev.No.  
Rev. 0.0  
Rev. 1.0  
History  
Remark  
Preliminary  
Final  
DraftData  
Initial release with Preliminary.  
Apr. 22th, 1995  
Feb. 29th, 1996  
Release to final Data Sheet.  
1.1. Delete Preliminary  
Rev. 2.0  
Update D.C parameters.  
Final  
Jul. 16th, 1996  
2.1. Update D.C parameters  
Previous spec.  
Updated spec.  
(12/15/17/20ns part)  
170/165/165/160mA  
25mA  
Items  
(12/15/17/20ns part)  
200/190/180/170mA  
30mA  
Icc  
Isb  
Isb1  
10mA  
8mA  
Rev. 3.0  
Add Industrial Temperature Range parts and 300mil-SOJ PKG.  
3.1. Add 32-Pin 300mil-SOJ Package.  
Final  
Jun. 2nd, 1997  
3.2. Add Industrial Temperature Range parts with the same parame-  
ters as Commercial Temperature Range parts.  
3.2.1. Add KM68002AI parts for Industrial Temperature Range.  
3.2.2. Add ordering information.  
3.2.3. Add the condition for operating at Industrial Temp. Range.  
3.3. Add the test condition for Voh1 with Vcc=5V±5% at 25°C  
3.4. Add timing diagram to define tWP as ²(Timing Wave Form of  
Write Cycle(CS=Controlled)²  
Rev. 4.0  
4.1. Delete 17ns Part  
Final  
Feb. 25th, 1998  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this  
device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Rev 4.0  
Ferruary 1998  
- 1 -  

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