PRELIMINARY
KM681000B Family
CMOS SRAM
128K x8 bit Low Power CMOS Static RAM
FEATURES
GENERAL DESCRIPTION
The KM681000B family is fabricated by SAMSUNG's advanced
CMOS process technology. The family can support various
operating temperature ranges and have various package types
for user flexibility of system design. The family also support low
data retention voltage for battery back-up operation with low
data retention current.
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Process Technology : 0.6
Organization : 128Kx8
CMOS
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Power Supply Voltage : Single 5.0V
Low Data Retention Voltage : 2V(Min)
Three state output and TTL Compatible
Package Type : JEDEC Standard
10%
32-DIP, 32-SOP, 32-TSOP I R/F
PRODUCT FAMILY
Power Dissipation
PKG Type
Product
Family
Operating
Temperature
Speed
Standby
Operating
(ICC2)
(ISB1, Max)
KM681000BL
KM681000BL-L
KM681000BLE
§Ë
100
32-DIP,32-SOP
32-TSOP I R/F
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Commercial(0~7
)
55/70ns
70/100ns
70/100ns
§Ë
20
§Ë
100
32-SOP
32-TSOP I R/F
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Extended(-25~85
)
70mA
KM681000BLE-L
KM681000BLI
§Ë
50
§Ë
100
32-SOP
32-TSOP I R/F
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)
Industrial(-40~85
KM681000BLI-L
§Ë
50
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A0~3, A8~11
A11
1
32
31
30
29
28
27
26
25
24
OE
A10
Y-Decoder
A9
A8
2
3
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A13
WE
CS2
A15
VCC
NC
A16
A14
A12
A7
4
5
6
VCC
A15
N.C
A16
A14
A12
A7
1
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
7
2
8
32-TSOP
Type I - Forward
9
CS2
WE
A13
A4~7,
A12~16
3
10
11
12
13
14
15
16
23
22
21
20
19
18
17
4
Cell
Array
5
CS1,CS2
A6
A1
A8
A6
6
A5
A2
WE,OE
A9
A5
7
A4
32-DIP
32-SOP
A3
A11
A4
8
I/O1~8
OE
A10
A3
9
I/O Buffer
A2
10
11
12
13
14
15
16
16
15
14
13
12
11
10
9
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
A3
A4
A5
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
A1
A2
A1
A6
A0
A0
A7
I/O1
I/O2
I/O3
VSS
I/O4
I/O5
I/O6
I/O7
I/O8
CS1
A10
A12
A14
A16
NC
VCC
A15
CS2
WE
A13
A8
/O1
/O2
/O3
VSS
Name
A0~A16
WE
Function
32-TSOP
Type I-Reverse
Address Inputs
Write Enable Input
Chip Select Inputs
Output Enable Input
Data Inputs/Outputs
Power
8
7
6
5
CS1,CS2
OE
4
3
2
A9
1
A11
OE
I/O1~I/O18
Vcc
Vss
Ground
N.C
No Connection
Revision 0.3
April 1996