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KM62U256DL-L PDF预览

KM62U256DL-L

更新时间: 2024-11-06 03:05:51
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
9页 162K
描述
32Kx8 bit Low Power and Low Voltage CMOS Static RAM

KM62U256DL-L 数据手册

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KM62V256D, KM62U256D Family  
CMOS SRAM  
Document Title  
32Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No.  
History  
Draft Data  
Remark  
0.0  
Initial draft  
April 1, 1997  
Preliminary  
1.0  
Finalize  
November 12, 1997  
Final  
- Add 70ns part in KM62U256D Family  
- Show ICC read only, and increased value  
ICC = 2mA ® ICC Read = 5mA  
- Seperate ICC1 read and write  
ICC1 = 5mA® ICC1 Read = 5mA, ICC1 Write = 10mA  
- Improved standby current(ISB1)  
Commercial part : 10mA® 5mA  
Extended and Industrial part : 20mA® 5mA  
- Improved VIL(Min.) : 0.4V® 0.6V  
- Improved power dissipation : 0.7W® 1W  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
1
November 1997  

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