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KM62U256DLTG-7L0 PDF预览

KM62U256DLTG-7L0

更新时间: 2024-11-25 15:36:27
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 159K
描述
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 8 X 13.40 MM, TSOP1-28

KM62U256DLTG-7L0 技术参数

生命周期:Active包装说明:TSOP1,
Reach Compliance Code:compliant风险等级:5.76
最长访问时间:70 nsJESD-30 代码:R-PDSO-G28
长度:11.8 mm内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端子数量:28
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:32KX8
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL座面最大高度:1.2 mm
最大供电电压 (Vsup):3.3 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.55 mm
端子位置:DUAL宽度:8 mm
Base Number Matches:1

KM62U256DLTG-7L0 数据手册

 浏览型号KM62U256DLTG-7L0的Datasheet PDF文件第2页浏览型号KM62U256DLTG-7L0的Datasheet PDF文件第3页浏览型号KM62U256DLTG-7L0的Datasheet PDF文件第4页浏览型号KM62U256DLTG-7L0的Datasheet PDF文件第5页浏览型号KM62U256DLTG-7L0的Datasheet PDF文件第6页浏览型号KM62U256DLTG-7L0的Datasheet PDF文件第7页 
KM62V256D, KM62U256D Family  
CMOS SRAM  
Document Title  
32Kx8 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No.  
History  
Draft Data  
Remark  
0.0  
Initial draft  
April 1, 1997  
Preliminary  
1.0  
Finalize  
November 12, 1997  
Final  
- Add 70ns part in KM62U256D Family  
- Show ICC read only, and increased value  
ICC = 2mA ® ICC Read = 5mA  
- Seperate ICC1 read and write  
ICC1 = 5mA® ICC1 Read = 5mA, ICC1 Write = 10mA  
- Improved standby current(ISB1)  
Commercial part : 10mA® 5mA  
Extended and Industrial part : 20mA® 5mA  
- Improved VIL(Min.) : 0.4V® 0.6V  
- Improved power dissipation : 0.7W® 1W  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
1
November 1997  

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