生命周期: | Obsolete | 零件包装代码: | TSOP2 |
包装说明: | SOP, | 针数: | 50 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.84 |
访问模式: | FAST PAGE WITH EDO | JESD-30 代码: | R-PDSO-G50 |
内存密度: | 67108864 bit | 内存集成电路类型: | EDO DRAM |
内存宽度: | 4 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 50 |
字数: | 16777216 words | 字数代码: | 16000000 |
组织: | 16MX4 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 端子形式: | GULL WING |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM48V104AS-7 | SAMSUNG |
获取价格 |
EDO DRAM, 16MX4, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
KM48V104AS-L5 | SAMSUNG |
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EDO DRAM, 16MX4, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
KM48V104AS-L6 | SAMSUNG |
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EDO DRAM, 16MX4, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
KM48V104AS-L7 | SAMSUNG |
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EDO DRAM, 16MX4, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
KM48V2000ALLT-6 | SAMSUNG |
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Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, PLASTIC, TSOP2-28 | |
KM48V2000ASLJ-7 | SAMSUNG |
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Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28, 0.400 INCH, PLASTIC, SOJ-28 | |
KM48V2000B | SAMSUNG |
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2M x 8Bit CMOS Dynamic RAM with Fast Page Mode | |
KM48V2000BK-8 | SAMSUNG |
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Fast Page DRAM, 2MX8, 80ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 | |
KM48V2000BK-L6 | SAMSUNG |
获取价格 |
Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 | |
KM48V2000BK-L7 | SAMSUNG |
获取价格 |
Fast Page DRAM, 2MX8, 70ns, CMOS, PDSO28, 0.300 INCH, SOJ-28 |