Datasheet > KM41C4000DT-L6

KM41C4000DT-L6

更新时间： 2024-11-16 10:00:03

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
20页	340K
描述
Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20

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中文翻译

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KM41C4000DT-L6 数据手册

KM41C4000D, KM41V4000D

CMOS DRAM

4M x 1Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

This is a family of 4,194,304 x 1bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells

within the same row. Power supply voltage (+5V or +3.3V), access time (-5, -6 or -7), power consumption(Normal or Low power), and

package type (SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and

Hidden refresh capabilities. Furthermore, self-refresh operation is available in Low power version.

This 4Mx1 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low power

consumption and high reliability. It may be used as main memory for main frames and mini computers, personal computer and high per-

formance microprocessor systems.

• Fast Page Mode operation

FEATURES

• CAS-before-RAS refresh capability

• Part Identification

• RAS-only and Hidden refresh capability

• Self-refresh capability (3.3V, L-ver only)

• Fast parallel test mode capability

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Common I/O using early write

- KM41C4000D/D-L(5V, 1K Ref.)

- KM41V4000D/D-L(3.3V, 1K Ref.)

• ActivePowerDissipation

• JEDEC Standard pinout

Unit : mW

• Available in 26(20)-pin SOJ 300mil and TSOP(II)

300mil packages

Speed

-5

3.3V

470

• +5V±10% power supply(5V product)

• +3.3V±0.3V power supply(3.3V product)

-6

220

200

415

-7

360

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

RAS

CAS

Vcc

Vss

Control

Clocks

Part

NO.

Refresh

cycle

Refresh Period

VBB Generator

Normal

L-ver

KM41C4000D

KM41V4000D

16ms

128ms

Row Decoder

Refresh Timer

Refresh Control

Data in

Buffer

Memory Array

4,194,304 x1

Cells

Refresh Counter

Row Address Buffer

Col. Address Buffer

• Performance Range

Speed

-5

Remark

tRAC

tCAC

tRC

tPC

50ns 15ns 90ns 35ns 5V only

60ns 15ns 110ns 40ns 5V/3.3V

70ns 20ns 130ns 45ns 5V/3.3V

Data out

Buffer

A0~A9

Column Decoder

-6

-7

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...20

中文翻译

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与KM41C4000DT-L6相关器件

型号	品牌	获取价格	描述	数据表
KM41C4000DT-L7	SAMSUNG	获取价格	Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, 0.300 INCH, TSOP2-26/20
KM41C4000Z-10	SAMSUNG	获取价格	Fast Page DRAM, 4MX1, 100ns, CMOS, PZIP20, PLASTIC, ZIP-20
KM41C4000Z-8	SAMSUNG	获取价格	Fast Page DRAM, 4MX1, 80ns, CMOS, PZIP20, PLASTIC, ZIP-20
KM41C4001AZ-7	SAMSUNG	获取价格	Nibble Mode DRAM, 4MX1, 70ns, CMOS, PZIP20, PLASTIC, ZIP-20
KM41C4001BJ-8	SAMSUNG	获取价格	Nibble Mode DRAM, 4MX1, 80ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
KM41C4001BVR-8	SAMSUNG	获取价格	Nibble Mode DRAM, 4MX1, 80ns, CMOS, PDSO20, PLASTIC, REVERSE, TSOP1-24/20
KM41C4002AZ-10	SAMSUNG	获取价格	Static Column DRAM, 4MX1, 100ns, CMOS, PZIP20, PLASTIC, ZIP-20
KM41C4002BV-7	SAMSUNG	获取价格	Static Column DRAM, 4MX1, 70ns, CMOS, PDSO20, PLASTIC, TSOP1-24/20
KM41C4002CZ-8	SAMSUNG	获取价格	Static Column DRAM, 4MX1, 80ns, CMOS, PZIP20, 0.400 INCH, PLASTIC, ZIP-20
KM41C464J-10	SAMSUNG	获取价格	Fast Page DRAM, 64KX4, 100ns, CMOS, PQCC18, PLASTIC, LCC-18

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