Datasheet > KM4170

KM4170

更新时间： 2024-11-13 22:15:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
20页	534K
描述
Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers

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KM4170 数据手册

IS41C16100S

IS41LV16100S

1M x 16 (16-MBIT) DYNAMIC RAM

WITH EDO PAGE MODE

DESCRIPTION

FEATURES

The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x

16-bit high-performance CMOS Dynamic Random Access

Memories. These devices offer an accelerated cycle access

called EDO Page Mode. EDO Page Mode allows 1,024 ran-

dom accesses within a single row with access cycle time as

short as 20 ns per 16-bit word. The Byte Write control, of upper

and lower byte, makes the IS41C16100S ideal for use in

16-, 32-bit wide data bus systems.

• Extended Data-Out (EDO) Page Mode access cycle

• TTL compatible inputs and outputs; tristate I/O

• Refresh Interval:

Refresh Mode: 1,024 cycles /16 ms

RAS-Only, CAS-before-RAS (CBR), and Hidden

Self refresh Mode - 1,024 cycles / 128ms

• JEDEC standard pinout

• Single power supply:

These features make the IS41C16100Sand IS41LV16100S

ideally suited for high-bandwidth graphics, digital signal

processing, high-performance computing systems, and

peripheral applications.

5V ± 10% (IS41C16100S)

3.3V ± 10% (IS41LV16100S)

• Byte Write and Byte Read operation via two CAS

• Industrail Temperature Range -40°C to 85°C

The IS41C16100S and IS41LV16100S are packaged in a

42-pin 400mil SOJ and 400mil 50- (44-) pin TSOP-2.

EY TIMING PARAMETERS

Parameter

-45⁽¹⁾

-50

-60

Unit

Max. RAS Access Time (tRAC)

Max. CAS Access Time (tCAC)

Max. Column Address Access Time (tAA)

Min. EDO Page Mode Cycle Time (tPC)

Min. Read/Write Cycle Time (tRC)

Note:

104

1. 45 ns Only for Vcc = 3.3V.

PIN CONFIGURATIONS

50(44)-Pin TSOP II

42-Pin SOJ

PIN DESCRIPTIONS

VCC

I/O0

I/O1

I/O2

I/O3

VCC

I/O4

I/O5

I/O6

I/O7

GND

I/O15

I/O14

I/O13

I/O12

GND

I/O11

I/O10

I/O9

A0-A9

I/O0-15

Address Inputs

VCC

I/O0

I/O1

I/O2

I/O3

VCC

I/O4

I/O5

I/O6

I/O7

GND

I/O15

I/O14

I/O13

I/O12

GND

I/O11

I/O10

I/O9

I/O8

Data Inputs/Outputs

Write Enable

Output Enable

RAS

UCAS

LCAS

Vcc

Row Address Strobe

Upper Column Address Strobe

Lower Column Address Strobe

Power

I/O8

RAS

LCAS

UCAS

LCAS

UCAS

RAS

GND

Ground

No Connection

VCC

GND

VCC

GND

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors

Integrated Circuit Solution Inc.

DR004-0B

12 3 4 5 6 7...20

中文翻译

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与KM4170相关器件

型号	品牌	获取价格	描述	数据表
KM4170IS5	FAIRCHILD	获取价格	Operational Amplifier, 1 Func, 6000uV Offset-Max, BIPolar, PDSO5, SC-70, 5 PIN
KM4170IS5TR3	FAIRCHILD	获取价格	Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers
KM4170IS5TR3_NL	FAIRCHILD	获取价格	暂无描述
KM4170IT5	FAIRCHILD	获取价格	Operational Amplifier, 1 Func, 6000uV Offset-Max, BIPolar, PDSO5, SOT-23, 5 PIN
KM4170IT5TR3	FAIRCHILD	获取价格	Low Cost, +2.7V & +5V, Rail-to-Rail I/O Amplifiers
KM418C256ALLT-7	SAMSUNG	获取价格	Fast Page DRAM, 256KX18, 70ns, CMOS, PDSO40, PLASTIC, TSOP2-44/40
KM418C256ALLTR-6	SAMSUNG	获取价格	Fast Page DRAM, 256KX18, 60ns, CMOS, PDSO40, PLASTIC, REVERSE, TSOP2-44/40
KM418C256ALLZ-8	SAMSUNG	获取价格	Fast Page DRAM, 256KX18, 80ns, CMOS, PZIP40, PLASTIC, ZIP-40
KM418C256ALT-6	SAMSUNG	获取价格	Fast Page DRAM, 256KX18, 60ns, CMOS, PDSO40, PLASTIC, TSOP2-44/40
KM418C256ALT-7	SAMSUNG	获取价格	Fast Page DRAM, 256KX18, 70ns, CMOS, PDSO40, PLASTIC, TSOP2-44/40

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