Datasheet > 存储 > DRAM> KM416S8030T-G/FL

KM416S8030T-G/FL

更新时间： 2024-11-04 22:47:35

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器
页数	文件大小	规格书
10页	120K
描述
2M x 16Bit x 4 Banks Synchronous DRAM

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中文翻译

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数据手册

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KM416S8030T-G/FL 数据手册

Preliminary

KM416S8030

CMOS SDRAM

2M x 16Bit x 4 Banks Synchronous DRAM

FEATURES

GENERAL DESCRIPTION

• JEDEC standard 3.3V power supply

• LVTTL compatible with multiplexed address

• Four banks operation

The KM416S8030 is 134,217,728 bits synchronous high data

rate Dynamic RAM organized as 4 x 2,097,152 words by 16

bits, fabricated with SAMSUNG¢s high performance CMOS

technology. Synchronous design allows precise cycle control

with the use of system clock I/O transactions are possible on

every clcok cycle. Range of operating frequencies, programma-

ble burst length and programmable latencies allow the same

device to be useful for a variety of high bandwidth, high perfor-

mance memory system applications.

• MRS cycle with address key programs

-. CAS Latency (2 & 3)

-. Burst Length (1, 2, 4, 8 & full page)

-. Burst Type (Sequential & Interleave)

• All inputs are sampled at the positive going edge of the system

clock.

• Burst Read Single-bit Write operation

• DQM for masking

ORDERING INFORMATION

• Auto & self refresh

Part NO.

MAX Freq. Interface Package

• 64ms refresh period (4K cycle)

KM416S8030T-G/F8

KM416S8030T-G/FH

KM416S8030T-G/FL

KM416S8030T-G/F10

125MHz

54pin

TSOP(II)

100MHz

LVTTL

FUNCTIONAL BLOCK DIAGRAM

LWE

Data Input Register

LDQM

Bank Select

2M x 16

DQi

CLK

ADD

Column Decoder

Latency & Burst Length

LCKE

Programming Register

LWCBR

LRAS

LCBR

LWE

LCAS

LDQM

Timing Register

CLK

CKE

RAS

CAS

LDQM

UDQM

Samsung Electronics reserves the right to

change products or specification without

notice.

REV. 2 Mar. '98

12 3 4 5 6 7...10

中文翻译

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与KM416S8030T-G/FL相关器件

型号	品牌	获取价格	描述	数据表
KM416S8030T-G10	SAMSUNG	获取价格	Synchronous DRAM, 8MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS
KM416S8030T-G8	SAMSUNG	获取价格	Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS
KM416S8030T-GL	SAMSUNG	获取价格	Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS
KM416U1004CTE-L6	SAMSUNG	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
KM416U1004CTE-L7	SAMSUNG	获取价格	EDO DRAM, 1MX16, 70ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
KM416U1004CT-L6	SAMSUNG	获取价格	EDO DRAM, 1MX16, 60ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-50/44
KM416V1000AJ-F6	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42, PLASTIC, SOJ-42
KM416V1000AJ-L7	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
KM416V1000AJ-L8	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 80ns, CMOS, PDSO42, 0.400 INCH, SOJ-42
KM416V1000AR-7	SAMSUNG	获取价格	Fast Page DRAM, 1MX16, 70ns, CMOS, PDSO44, PLASTIC, REVERSE, TSOP2-44