Datasheet > KIA50N06

KIA50N06

更新时间： 2024-10-14 07:08:03

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
9页	832K
描述
three-terminal silicon device with current conduction capability of about 50A,

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KIA50N06 数据手册

50 Amps, 60 Volts

N-CHANNEL MOSFET

销售电话：13641469108廖先生

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50N06

KIA

SEMICONDUCTORS

1.Description

The KIA50N06 is three-terminal silicon device with current conduction capability of about

50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold

voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching

2. Features

RDS(ON)=23mΩ@VGS=10V.

Ultra low gate charge (typical 30nC)

Low reverse transfer capacitance

Fast switching capability

100％ avalanche energy specified

Improved dv/dt capability

3. Pin configuration

Function

Gate

Drain

Source

1 of 9

12 3 4 5 6 7...9

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