Datasheet > KIA5N50S

KIA5N50S

更新时间： 2024-10-15 18:09:47

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KIA5N50S 数据手册

5A，500V

5N50S

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

1. Features



Robust High Voltage Termination

R_DS(ON)=1.35Ω(typ.) @ V_GS=10V (DFN5*6)

R_DS(ON)=1.38Ω(typ.) @ V_GS=10V (TO-252)

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

I_DSSand V_DS(on) Specified at Elevated Temperature

2. Pin configuration

DFN5*6

TO-252

Function

DFN5*6

TO-252

Gate

Drain

5,6,7,8

1,2,3

Source

1 / 5

Rev 1.1 Sep. 2023

12 3 4 5

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