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KI009P

更新时间: 2024-11-19 18:09:19
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
1页 61K
描述
P-Channel MOSFET

KI009P 数据手册

  
SMD Type  
MOSFET  
P-Channel MOSFET  
KI009P  
SOT-23  
Unit: mm  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
3
Ƶ Features  
ƽ VDS (V) =-12V  
ƽ I  
ƽ RDS(ON) ˘ 52mȍ (VGS =-4.5V , I  
ƽ RDS(ON) ˘ 87m ȍ (VGS =-2.5V , I  
D =-4 A  
1
2
+0.1  
-0.1  
+0.05  
-0.01  
0.95  
0.1  
D
=-4A)  
+0.1  
-0.1  
1.9  
D=-3A)  
1. Gate  
2. Source  
3. Drain  
Ƶ Absolute Maximum Ratings Ta = 25ć  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
-12  
12  
Unit  
V
VDS  
GS  
Gate-Source Voltage  
V
Continuous Drain Current  
Power Dissipation  
I
D
4
1
A
P
D
W
Junction Temperature  
T
J
150  
ć
Junction Storage Temperature Range  
T
stg  
-55 to 150  
Ƶ Electrical Characteristics Ta = 25ć  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body leakage current  
Gate Threshold Voltage  
V
DSS  
-12  
I
D
=-250­A, VGS=0V  
I
DSS  
GSS  
V
V
V
V
V
DS=-12V, VGS=0V  
-1  
100  
-1  
­A  
nA  
V
I
DS=0V, VGS= 12V  
V
GS(th)  
-0.4  
DS=VGS =-250­A  
I
D
GS=-4.5V, I  
GS=-2.5V, I  
D
=-4A  
=-3A  
52  
45  
65  
Static Drain-Source On-Resistance  
Diode Forward Voltage  
RDS(On)  
m¡  
D
87  
V
SD  
I
S
=-1A,VGS=0V  
-1.15  
V
Ƶ Marking  
Marking  
3415  
1
www.kexin.com.cn  

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