Datasheet > KI010NDS

KI010NDS

更新时间： 2024-06-27 12:11:03

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	340K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI010NDS 数据手册

SMD Type

MOSFET

N-Channel MOSFET

KI010NDS

SOT-23-3

Unit: mm

+0.2

-0.1

2.9

0.4

+0.1

-0.1

■ Features

● V^{DS (V)}= 20V

● ID = 6 A (VGS = 10V)

+0.02

-0.02

+0.1

-0.1

0.15

0.95

● RDS(ON) ＜ 12mΩ (VGS = 4.5V)

● RDS(ON) ＜ 18mΩ (VGS = 2.5V)

+0.1

-0.2

1.9

1. Gate

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

±12

Gate-Source Voltage

Continuous Drain Current

Power Dissipation

Thermal Resistance.Junction- to-Ambient

Junction Temperature

thJA

62.5

150

℃/W

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

Gate Threshold Voltage

DSS

=250μA, VGS=0V

DSS

GSS

±100

DS=20V, VGS=0V,TJ=25℃

DS=0V, VGS=±12V

^DS=V^GS, I =250μA

GS(th)

0.5

GS=4.5V, I

GS=2.5V, I

=6A

Static Drain-Source On-Resistance

RDS(On)

mΩ

D=5A

■ Marking

Marking

010N

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