Datasheet > KI013P

KI013P

更新时间： 2024-10-15 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	137K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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KI013P 数据手册

SMD Type

MOSFET

P-Channel Enhancement MOSFET

KI013P

Ƶ Features

SOT-23

Unit: mm

+0.1

-0.1

2.9

ƽ VDS (V) =-20V

+0.1

-0.1

0.4

ƽ RDS(ON) ˘ 130m¡ (VGS =-4.5V)

ƽ RDS(ON) ˘ 190m¡ (VGS =-2.5V)

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Gate

2.Source

3.Drain

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Drain-Source Voltage

Symbol

Rating

-20

Unit

Gate-Source Voltage

± ±

-2.3

-1.5

-10

Continuous Drain Current *1

Ta=25ć

Ta=70ć

Pulsed Drain Current *2

Power Dissipation *1

IDM

1.25

0.8

Ta=25ć

Ta=70ć

ć/W

Thermal Resistance.Junction- to-Ambient *1

Thermal Resistance.Junction- to-Ambient *3

Junction Temperature

100

166

150

thJA

Storage Temperature Range

Tstg

-55 to 150

*1 Surface Mounted on FR4 Board, t İ 5 sec.

*2 Pulse width limited by maximum junction temperature.

*3 Surface Mounted on FR4 Board.

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