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KF3N60P

更新时间: 2024-09-30 12:20:23
品牌 Logo 应用领域
KEC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 97K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF3N60P 技术参数

生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.69
Is Samacsys:N雪崩能效等级(Eas):120 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):3 A最大漏源导通电阻:3.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):7 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

KF3N60P 数据手册

 浏览型号KF3N60P的Datasheet PDF文件第2页浏览型号KF3N60P的Datasheet PDF文件第3页浏览型号KF3N60P的Datasheet PDF文件第4页浏览型号KF3N60P的Datasheet PDF文件第5页浏览型号KF3N60P的Datasheet PDF文件第6页浏览型号KF3N60P的Datasheet PDF文件第7页 
KF3N60P/F  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
KF3N60P  
A
O
C
This planar stripe MOSFET has better characteristics, such as fast  
switching time, low on resistance, low gate charge and excellent  
avalanche characteristics. It is mainly suitable for electronic ballast and  
switching mode power supplies.  
F
E
I
DIM MILLIMETERS  
G
Q
_
9.9 + 0.2  
A
B
C
D
E
F
B
15.95 MAX  
1.3+0.1/-0.05  
_
0.8+ 0.1  
FEATURES  
_
3.6 0.2  
+
_
2.8+ 0.1  
· VDSS= 600V, ID= 3A  
K
P
3.7  
G
H
I
· Drain-Source ON Resistance : RDS(ON)=3.3@VGS = 10V  
· Qg(typ) = 8.5nC  
M
N
0.5+0.1/-0.05  
1.5  
L
J
_
13.08+ 0.3  
J
K
L
M
N
O
P
D
1.46  
_
1.4 + 0.1  
H
N
_
1.27+ 0.1  
_
2.54+ 0.2  
MAXIMUM RATING (Ta=25)  
_
+
4.5 0.2  
_
+
2.4 0.2  
RATING  
_
9.2 + 0.2  
Q
CHARACTERISTIC  
SYMBOL  
UNIT  
1
2
3
1. GATE  
2. DRAIN  
3. SOURCE  
KF3N60P  
KF3N60F  
VDSS  
VGSS  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25℃  
600  
V
V
±30  
TO-220AB  
3
1.9  
7
3*  
1.9*  
7*  
ID  
Drain Current  
@TC=100℃  
A
KF3N60F  
IDP  
Pulsed (Note1)  
C
A
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
120  
3.2  
4.5  
mJ  
mJ  
Repetitive Avalanche Energy  
(Note 1)  
EAR  
DIM MILLIMETERS  
E
_
10.16 0.2  
+
A
B
C
D
E
Peak Diode Recovery dv/dt  
(Note 3)  
_
15.87 0.2  
+
dv/dt  
V/ns  
_
2.54 0.2  
+
_
0.8 0.1  
+
73  
31  
W
W/℃  
Tc=25℃  
Drain Power  
Dissipation  
_
+
3.18  
0.1  
PD  
_
3.3 0.1  
+
F
0.58  
0.25  
Derate above 25℃  
_
G
H
J
12.57 0.2  
+
L
M
_
Tj  
0.5 0.1  
Maximum Junction Temperature  
Storage Temperature Range  
150  
R
+
_
13.0 0.5  
+
Tstg  
_
-55150  
K
L
3.23 0.1  
+
D
1.47 MAX  
1.47 MAX  
Thermal Characteristics  
M
N
O
Q
R
N
N
H
_
2.54 0.2  
+
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
1.7  
4
/W  
/W  
_
6.68 0.2  
+
_
4.7  
+
_
0.2  
Thermal Resistance, Junction-to-  
Ambient  
62.5  
62.5  
2.76 0.2  
+
1. GATE  
1
2
3
2. DRAIN  
3. SOURCE  
* : Drain current limited by maximum junction temperature.  
* Single Gauge Lead Frame  
PIN CONNECTION  
TO-220IS (1)  
(KF3N60P, KF3N60F)  
D
G
S
2010. 12. 20  
Revision No : 0  
1/2  

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