KF3N60P/F
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF3N60P
A
O
C
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
F
E
I
DIM MILLIMETERS
G
Q
_
9.9 + 0.2
A
B
C
D
E
F
B
15.95 MAX
1.3+0.1/-0.05
_
0.8+ 0.1
FEATURES
_
3.6 0.2
+
_
2.8+ 0.1
· VDSS= 600V, ID= 3A
K
P
3.7
G
H
I
· Drain-Source ON Resistance : RDS(ON)=3.3Ω @VGS = 10V
· Qg(typ) = 8.5nC
M
N
0.5+0.1/-0.05
1.5
L
J
_
13.08+ 0.3
J
K
L
M
N
O
P
D
1.46
_
1.4 + 0.1
H
N
_
1.27+ 0.1
_
2.54+ 0.2
MAXIMUM RATING (Ta=25℃)
_
+
4.5 0.2
_
+
2.4 0.2
RATING
_
9.2 + 0.2
Q
CHARACTERISTIC
SYMBOL
UNIT
1
2
3
1. GATE
2. DRAIN
3. SOURCE
KF3N60P
KF3N60F
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
600
V
V
±30
TO-220AB
3
1.9
7
3*
1.9*
7*
ID
Drain Current
@TC=100℃
A
KF3N60F
IDP
Pulsed (Note1)
C
A
Single Pulsed Avalanche Energy
(Note 2)
EAS
120
3.2
4.5
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
DIM MILLIMETERS
E
_
10.16 0.2
+
A
B
C
D
E
Peak Diode Recovery dv/dt
(Note 3)
_
15.87 0.2
+
dv/dt
V/ns
_
2.54 0.2
+
_
0.8 0.1
+
73
31
W
W/℃
℃
Tc=25℃
Drain Power
Dissipation
_
+
3.18
0.1
PD
_
3.3 0.1
+
F
0.58
0.25
Derate above 25℃
_
G
H
J
12.57 0.2
+
L
M
_
Tj
0.5 0.1
Maximum Junction Temperature
Storage Temperature Range
150
R
+
_
13.0 0.5
+
Tstg
_
-55∼ 150
℃
K
L
3.23 0.1
+
D
1.47 MAX
1.47 MAX
Thermal Characteristics
M
N
O
Q
R
N
N
H
_
2.54 0.2
+
RthJC
RthJA
Thermal Resistance, Junction-to-Case
1.7
4
℃/W
℃/W
_
6.68 0.2
+
_
4.7
+
_
0.2
Thermal Resistance, Junction-to-
Ambient
62.5
62.5
2.76 0.2
+
1. GATE
1
2
3
2. DRAIN
3. SOURCE
* : Drain current limited by maximum junction temperature.
* Single Gauge Lead Frame
PIN CONNECTION
TO-220IS (1)
(KF3N60P, KF3N60F)
D
G
S
2010. 12. 20
Revision No : 0
1/2