生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.67 | 雪崩能效等级(Eas): | 60 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 1.9 A | 最大漏极电流 (ID): | 1.9 A |
最大漏源导通电阻: | 4.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 40.3 W |
最大脉冲漏极电流 (IDM): | 4 A | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KF2N60D/I | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF2N60D_15 | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF2N60DI | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF2N60F | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF2N60I | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF2N60L | KEC |
获取价格 |
This planar stripe MOSFET has better characteristics, such as fast switching time, low on | |
KF2N60P | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF2N60P/F | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF2N60P_15 | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
KF2N60PF | KEC |
获取价格 |
N CHANNEL MOS FIELD EFFECT TRANSISTOR |