Datasheet > KCP56-16

KCP56-16

更新时间： 2024-10-30 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	53K
描述
NPN Medium Power Transistor

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中文翻译

获取价格

数据手册

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KCP56-16 数据手册

SMD Type

Transistors

NPN Medium Power Transistor

KCP56-16

SOT-223

Unit: mm

■ Features

+0.2

3.50_-0.2

6.50_-0.2

●

For AF driver and output stages

High collector current

+0.2

0.90_-0.2

+0.1

3.00_-0.1

+0.3

7.00_-0.3

Low collector-emitter saturation voltage

1 base

+0.1

0.70_-0.1

2.9

2 collector

3 emitter

4.6

■ Absolute Maximum Ratings Ta = 25℃

Parameter

collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

100

collector-emitter voltage

emitter-base voltage

collector current (DC)

1.5

peak collector current (tP < 5ms)

power dissipation

ICM

1.5

thermal resistance from junction to ambient

junction temperature

RθJA

℃/W

℃

150

Tstg

storage temperature

-65 to +150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Base-emitter breakdown voltage

Collector cut-off current

Symbol

Testconditons

Min

100

Typ Max

Unit

V(BR)CBO IC= 0.1mA,IE=0

V(BR)CEO IC= 10mA,IB=0

V(BR)EBO IC= 10μA,IE=0

ICBO

IEBO

IE = 0 A; VCB = 30 V

IC = 0 A; VEB = 5 V

100

Emitter cut-off current

IC = 5 mA; VCE = 2 V

IC =150 mA; VCE = 2 V

IC = 500 mA; VCE = 2 V

100

DC current gain

hFE

250

Collector-emitter saturation voltage

Transition frequency

VCE(sat) IC = 500mA; IB = 50 mA

fT IC = 10 mA; VCE = 5 V; f = 100 MHz

0.5

130

MHz

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中文翻译

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