Datasheet > KCP69

KCP69

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	74K
描述
PNP Transistor

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中文翻译

获取价格

数据手册

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KCP69 数据手册

SMD Type

TransisItCor

PNP medium power transistor

KCP69

SOT-223

Unit: mm

Features

+0.2

3.50

-0.2

+0.2

-0.2

6.50

High current (max. 1 A)

Low voltage (max. 20 V).

+0.2

0.90

-0.2

+0.1

-0.1

3.00

+0.3

7.00

-0.3

Base

2 ,4 Collector

Emitter

+0.1

0.70

-0.1

2.9

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

-32

Collector-emitter voltage

-20

Emitter-base voltage

-5

Collector current (DC)

-1

-2

Peak collector current

I^CM

Peak base current

I^BM

-200

P^D

1.35

Total power dissipation T^amb25

Storage temperature

T^stg

-65 to +150

150

Junction temperature

^Tj

Operating ambient temperature

Thermal resistance from junction to ambient

Thermal resistance from junction to solder point

T^amb

R^th(j-a)

R^th(j-s)

-65 to +150

K/W

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

Testconditons

I^E= 0 A; V^CB= -25 V

Min

Typ

Max

Unit

-100

-10

Collector cutoff current

I^E= 0 A; V^CB= -25 V; Tj = 150

I^C= 0 A; V^EB= -5 V

Emitter cutoff current

DC current gain

I^EBO

-100

V^CE= -10 V; I^C= -5 mA

V^CE= -1 V; I^C= -500 mA

V^CE= -1 V; I^C= -1 A

375

h^FE

DC current gain

BCP69-16

BCP69-25

100

160

250

375

-500

V^CE= -1 V; I^C= -500 mA

V^CEsat

V^BE

Collector-emitter saturation voltage

Base-emitter voltage

I^C= -1 A; I^B= -100 mA;

V^CE= -10 V; I^C= -5 mA

V^CE= -1 V; I^C= -1 A

-620

-1

Collector capacitance

Transition frequency

C^c

I^E= ie = 0 A; V^CB= -5 V; f = 1 MHz

IC = -10 mA; VCE = -5 V; f = 100 MHz 40

MHz

Marking

BCP69

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