Datasheet > KBPC2510TW

KBPC2510TW

更新时间： 2024-11-14 01:05:11

品牌	Logo	应用领域
GENESIC		/
页数	文件大小	规格书
3页	315K
描述
High efficiency

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中文翻译

获取价格

数据手册

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KBPC2510TW 数据手册

KBPC2506T/W thru KBPC2510T/W

V_RRM= 600 V - 1000 V

I_O= 25 A

Single Phase Silicon

Bridge Rectifier

Features

• High efficiency

• Silicon junction

• Metal case

• Types from 600 V to 1000 V V_RRM

KBPC-T/W Package

• Not ESD Sensitive

Mechanical Data

Case: Mounted in the bridge encapsulation

Mounting: Hole for #10 screw

Polarity: Marked on case

Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW

uses KBPC-W package)

Conditions

KBPC2510T/W

Parameter

Symbol

KBPC2506T/W

KBPC2508T/W

Unit

V_RRM

V_RMS

V_DC

T_j

1000

700

Repetitive peak reverse voltage

RMS reverse voltage

600

420

800

560

1000

DC blocking voltage

600

800

-55 to 150

Operating temperature

Storage temperature

-55 to 150

°C

T_stg

Electrical characteristics at Tc = 25 °C, unless otherwise specified

Single phase, half sine wave, 60 Hz, resistive or inductive load

For capacitive load derate current by 20%

Conditions

KBPC2510T/W

Parameter

Symbol

KBPC2506T/W

KBPC2508T/W

Unit

Maximum average forward rectified

current

T_c= 55 °C

I_O

350

1.1

350

1.1

350

1.1

8.3 ms half sine-wave

I_F= 12.5 A

I_FSM

V_F

Peak forward surge current

Maximum instantaneous forward

voltage per leg

T_c= 25 °C

Maximum DC reverse current at

rated DC blocking voltage per leg

I_R

μA

T_c= 100 °C

500

300

500

300

500

300

Typical junction capacitance ¹

Thermal characteristics

Typical thermal resistance ²

C_j

R_ΘJC

°C/W

1.9

¹- Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C.

²- Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink

www.genesicsemi.com/silicon-products/bridge-rectifiers/

12 3

中文翻译

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