DATA SHEET
SEMICONDUCTOR
KBP200~KBP210
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE
GLASS PASSIVATED BRIDGE RECTIFIE
VOLTAGE RANGE-50 to 1000 Volts CURRENT-2.0 Amperes
FEATURES
KBP Unit:inch(mm)
‧ Ideal for printed circuit board
( 5.2)
‧ Surge overload rating: 60 Amperes peak
‧ High temperature soldering : 260OC / 10 seconds at terminals
‧ Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.600 1
(
.560 14.2
)
(
7)
.46 11.
(
.42 10.7
)
AC
MECHANICAL DATA
‧ Case:Molded plastic
.50
12.7
‧ Epoxy: UL 94V-0 rate flame retardant
‧ Lead: MIL-STD-202E,Method 208 guaranteed
.
(
)MIN
(
)MIN
15.2
‧ Polarity: Symbols molded or marked on body
‧ Mounting position: Any
(
)
.034 0.86 DIA.
(
.028 0.
71) TYP
(
)
)
.160 4.1
1.0
‧ Weight: 2.74 grams
(
.140 3.6
(
)
1.4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
‧ Ratings at 25 ℃ ambient temperature unless otherwise specified.
‧ Single phase, half wave, 60 Hz, resistive or inductive load.
‧ For capacitive load, derate current by 20%.
( .9)
.153 3
(
.130 3.3
)
SYMBOL
VRRM
VRMS
VDC
KBP206 KBP208
UNITS
Volts
Volts
Volts
Amps
KBP200 KBP201 KBP202 KBP204
KBP210
1000
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
50
35
50
100
70
200
140
200
400
280
400
2.0
600
420
600
800
560
800
700
100
1000
Maximum Average Forward Output TA = 50℃
Peak Forward Surge Current 8.3 ms single half
sine-wave
IO
IFSM
60
Amps
Volts
superimposed on rated load (JEDEC method)
Maximum Forward Voltage Drop per element at 1.0A
DC
VF
IR
1.0
Maximum DC Reverse Current at
Rated DC Blocking Voltage per
element
@TA = 25℃
5
µAmp
@TA = 100℃
500
I2t Rating for Fusing(t<8.3ms)
Typical Junction Capacitance(Note1)
Operating Temperature Range
Storage Temperature Range
I2t
CJ
10
A2Sec
pF
15
TJ
-55 to + 150
-55 to + 150
℃
TSTG
℃
NOTES: 1.Measured at 1 MHz and applied reverse voltage of 4.0 volts
2.Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B with 0.47x0.47”(12x12mm)copperpads.
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1
REV.03 20130130