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KBP206G PDF预览

KBP206G

更新时间: 2024-02-05 07:12:56
品牌 Logo 应用领域
美台 - DIODES 整流二极管桥式整流二极管PC
页数 文件大小 规格书
2页 55K
描述
2.0A GLASS PASSIVATED BRIDGE RECTIFIER

KBP206G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.05其他特性:UL RECOGNIZED
最小击穿电压:600 V外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:R-PSIP-T4湿度敏感等级:1
最大非重复峰值正向电流:60 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:600 V
子类别:Bridge Rectifier Diodes表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

KBP206G 数据手册

 浏览型号KBP206G的Datasheet PDF文件第2页 
KBP2005G - KBP210G  
2.0A GLASS PASSIVATED BRIDGE RECTIFIER  
Features  
·
·
·
·
·
·
Glass Passivated Die Construction  
High Case Dielectric Strength of 1500V  
KBP  
RMS  
Dim  
A
MinMax  
14.25  
Low Reverse Leakage Current  
14.75  
10.60  
Surge Overload Rating to 65A Peak  
Ideal for Printed Circuit Board Applications  
L
B
10.20  
A
K
J
C
2.29 Typical  
Plastic Material - UL Flammability  
Classification 94V-0  
M
N
D
14.25  
3.56  
0.76  
1.17  
14.73  
4.06  
0.86  
1.42  
B
·
UL Listed Under Recognized Component Index,  
File Number E94661  
E
_
+
G
H
C
H
G
Mechanical Data  
2.8 X 45°  
Chamfer  
J
D
·
·
Case: Molded Plastic  
K
L
0.80  
3.35  
1.10  
3.65  
P
Terminals: Plated Leads, Solderable per  
MIL-STD-202, Method 208  
M
N
P
3° Nominal  
2° Nominal  
0.30 0.64  
·
·
·
·
Polarity: Marked on Body  
Approx. Weight: 1.52 grams  
Mounting Position: Any  
Marking: Type Number  
E
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBP  
KBP  
KBP  
KBP  
KBP  
2005G 201G 202G 204G 206G 208G 210G  
KBP  
KBP  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
VR(RMS)  
RMS Reverse Voltage  
280  
2.0  
V
A
Average Rectified Output Current  
@ TC = 105°C  
IO  
Non-Repetitive Peak Forward Surge Current, 8.3 ms single  
half-sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
65  
A
Forward Voltage per element  
@ IF = 2.0A  
VFM  
IRM  
1.1  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ TC = 25°C  
@ TC = 125°C  
5.0  
500  
µA  
Cj  
Typical Junction Capacitance per Element (Note 2)  
Typical Thermal Resistance (Note 1)  
25  
14  
pF  
°C/W  
°C  
RqJC  
Tj, TSTG  
Operating and Storage Temperature Range  
-65 to +150  
Notes:  
1. Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 1.6mm aluminum plate heat sink.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
DS21205 Rev. F-2  
1 of 2  
KBP2005G-KBP210G  

KBP206G 替代型号

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