Datasheet > K9K1208D0C-GIB0T

K9K1208D0C-GIB0T

更新时间： 2024-11-30 05:52:23

品牌	Logo	应用领域
三星 - SAMSUNG		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
39页	955K
描述
IC,EEPROM,NAND FLASH,64MX8,CMOS,BGA,63PIN,PLASTIC

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数据手册

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K9K1208D0C-GIB0T 数据手册

K9K1208Q0C

K9K1208D0C

K9K1208U0C

K9K1216Q0C

K9K1216D0C

K9K1216U0C

FLASH MEMORY

Document Title

64M x 8 Bit , 32M x 16 Bit NAND Flash Memory

Revision History

Revision No. History

Draft Date

Remark

0.0

Initial issue.

Sep. 12th 2002

Advance

1.0

1.Pin assignment of TBGA dummy ball is changed.

(before) DNU --> (after) N.C

Jan. 3rd 2003

2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 34)

3. Add the data protection Vcc guidence for 1.8V device - below about

1.1V. (Page 35)

4. Add the specification of Block Lock scheme.(Page 29~32)

5. Pin assignment of TBGA A3 ball is changed.

(before) N.C --> (after) Vss

2.0

1. The Maximum operating current is changed.

Read : Icc1 20mA-->30mA

Program : Icc2 20mA-->40mA

Erase : Icc3 20mA-->40mA

Jan. 17th 2003

Preliminary

2.1

2.2

The min. Vcc value 1.8V devices is changed.

K9K12XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V

Mar. 5th 2003

Pb-free Package is added.

K9K1208U0C-HCB0,HIB0

K9K12XXQ0C-HCB0,HIB0

K9K1216U0C-HCB0,HIB0

K9K1216Q0C-HCB0,HIB0

Mar. 13rd 2003

2.3

2.4

Errata is added.(Front Page)-K9K12XXQ0C

tWC tWP tRC tREH tRP tREA tCEA

Mar. 17th 2003

Apr. 4th 2003

Specification

45 25 50 15 25 30

Relaxed value 60 40 60 20 40 40

1. Max. Thickness of TBGA packge is changed.

0.09±0.10(Before) --> 1.10±0.10(After)

2. New definition of the number of invalid blocks is added.

(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb

memory space.)

1. The guidence of LOCKPRE pin usage is changed.

Don’t leave it N.C. Not using LOCK MECHANISM & POWER-ON AUTO-

READ, connect it Vss.(Before)

2.5

Jul. 4th 2003

--> Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect

it Vss or leave it N.C(After)

2. 2.65V device is added.

3. Note is added.

(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for

durations of 20 ns or less.)

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

12 3 4 5 6 7...39

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与K9K1208D0C-GIB0T相关器件

型号	品牌	获取价格	描述	数据表
K9K1208D0C-HIB0	SAMSUNG	获取价格	IC,EEPROM,NAND FLASH,64MX8,CMOS,BGA,63PIN,PLASTIC
K9K1208D0C-HIB00	SAMSUNG	获取价格	Flash, 64MX8, 45ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9K1208D0C-JCB0	SAMSUNG	获取价格	IC,EEPROM,NAND FLASH,64MX8,CMOS,BGA,63PIN,PLASTIC
K9K1208D0C-JCB00	SAMSUNG	获取价格	Flash, 64MX8, 30ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
K9K1208D0C-JCB0T	SAMSUNG	获取价格	IC,EEPROM,NAND FLASH,64MX8,CMOS,BGA,63PIN,PLASTIC
K9K1208D0C-JIB0	SAMSUNG	获取价格	IC,EEPROM,NAND FLASH,64MX8,CMOS,BGA,63PIN,PLASTIC
K9K1208D0C-JIB00	SAMSUNG	获取价格	Flash, 64MX8, 30ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63
K9K1208D0C-JIB0T	SAMSUNG	获取价格	IC,EEPROM,NAND FLASH,64MX8,CMOS,BGA,63PIN,PLASTIC
K9K1208Q0C	SAMSUNG	获取价格	64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1208Q0C-DCB0	SAMSUNG	获取价格	Flash, 64MX8, 55ns, PBGA63

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