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K9F5608U0M-YIB0 PDF预览

K9F5608U0M-YIB0

更新时间： 2024-11-25 22:09:39
品牌 Logo 应用领域
三星 - SAMSUNG 闪存
页数 文件大小 规格书
26页 351K
描述
32M x 8 Bit NAND Flash Memory

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K9F5608U0M-YIB0 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TSOP1包装说明：TSOP1, TSSOP48,.8,20
针数：48Reach Compliance Code：unknown
ECCN代码：3A991.B.1.AHTS代码：8542.32.00.51
风险等级：5.91最长访问时间：35 ns
其他特性：HARDWARE DATA PROTECTION; DATA RETENTION 10 YEARS命令用户界面：YES
数据轮询：NO数据保留时间-最小值：10
JESD-30 代码：R-PDSO-G48JESD-609代码：e0
长度：18.4 mm内存密度：268435456 bit
内存集成电路类型：FLASH内存宽度：8
功能数量：1部门数/规模：2K
端子数量：48字数：33554432 words
字数代码：32000000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：32MX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装等效代码：TSSOP48,.8,20
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
页面大小：512 words并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED电源：3.3 V
编程电压：2.7 V认证状态：Not Qualified
就绪/忙碌：YES座面最大高度：1.2 mm
部门规模：16K最大待机电流：0.00005 A
子类别：Flash Memories最大压摆率：0.02 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3.3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子节距：0.5 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED切换位：NO
类型：NAND TYPE宽度：12 mm
Base Number Matches：1

K9F5608U0M-YIB0 数据手册

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FLASH MEMORY  
K9F5608U0M-YCB0,K9F5608U0M-YIB0  
Document Title  
32M x 8 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
0.1  
0.2  
Initial issue.  
April. 10th 1999  
Advanced  
Information  
Advanced  
Information  
Preliminary  
Revised real-time map-out algorithm(refer to technical notes)  
July. 23th 1999  
Sep. 15th 1999  
1. Changed device name  
i. KM29U256T -> K9F5608U0M-YCB0  
ii. KM29U256IT -> K9F5608U0M-YIB0  
0.3  
1. Changed tWP AC Timing  
Mar. 21th 2000  
Preliminary  
- If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise  
tWP may be minimum 25ns.  
2. Changed Sequential Row Read operation  
- The Sequential Read 1 and 2 operation is allowed only within a block  
3. Changed invalid block(s) marking method prior to shipping  
- The invalid block(s) information is written the 1st or 2nd page of the  
invalid block(s) with 00h data  
--->The invalid block(s) status is defined by the 6th byte in the spare  
area. Samsung makes sure that either the 1st or 2nd page of every  
invalid block has 00h data at the column address of 517.  
4. Added a new card-type package : K9S5608U0M-MCB0  
0.4  
0.5  
1. Changed Endurance : 1million -> 100K Program/Erase Cycles  
Apr. 7th 2000  
Apr. 29th 2000  
Preliminary  
Preliminary  
1. Changed package name  
: K9S5608U0M-MCB0 ->K9F5608U0M-MCB0(Micro Flash Card)  
2. Changed invalid block(s) marking method prior to shipping  
- The invalid block(s) status is defined by the 6th byte in the spare  
area. Samsung makes sure that either the 1st or 2nd page of every  
invalid block has 00h data at the column address of 517.  
--->The invalid block(s) status is defined by the 6th byte in the spare  
area. Samsung makes sure that either the 1st or 2nd page of every  
invalid block has non-FFh data at the column address of 517.  
0.6  
0.7  
1. Removed Micro Flash Card  
2. Changed SE pin description  
- SE is recommended to coupled to GND or Vcc and should not be  
toggled during reading or programming.  
July 17th 2000  
Nov. 20th 2000  
Final  
1. Explain how pointer operation works in detail.  
2. Renamed GND input (pin # 6) on behalf of SE (pin # 6)  
- The SE input controls the access of the spare area. When SE is high,  
the spare area is not accessible for reading or programming. SE is rec  
ommended to be coupled to GND or Vcc and should not be toggled  
during reading or programming.  
=> Connect this input pin to GND or set to static low state unless the  
sequential read mode excluding spare area is used.  
3. Updated operation for tRST timing  
- If reset command(FFh) is written at Ready state, the device goes into  
Busy for maximum 5us.  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
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K9F5608U0M-YIB0 替代型号

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