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K9F5608U0A-YCB0 PDF预览

K9F5608U0A-YCB0

更新时间： 2024-11-07 22:06:51
品牌 Logo 应用领域
三星 - SAMSUNG 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
29页 608K
描述
32M x 8 Bit NAND Flash Memory

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K9F5608U0A-YCB0 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：TSOP1
包装说明：TSOP1, TSSOP48,.8,20针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51风险等级：5.89
Is Samacsys：N最长访问时间：35 ns
其他特性：CONTAINS ADDITIONAL 1M X 8 BIT NAND FLASH命令用户界面：YES
数据轮询：NOJESD-30 代码：R-PDSO-G48
JESD-609代码：e0长度：18.4 mm
内存密度：268435456 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
部门数/规模：2K端子数量：48
字数：33554432 words字数代码：32000000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：32MX8
封装主体材料：PLASTIC/EPOXY封装代码：TSOP1
封装等效代码：TSSOP48,.8,20封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE页面大小：512 words
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3.3 V编程电压：2.7 V
认证状态：Not Qualified就绪/忙碌：YES
座面最大高度：1.2 mm部门规模：16K
最大待机电流：0.00005 A子类别：Flash Memories
最大压摆率：0.02 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：NO类型：NAND TYPE
宽度：12 mmBase Number Matches：1

K9F5608U0A-YCB0 数据手册

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K9F5608U0A-YCB0,K9F5608U0A-YIB0  
FLASH MEMORY  
Document Title  
32M x 8 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
0.1  
Initial issue.  
July 17th 2000  
Advanced  
Information  
1. Support copy-back program  
Oct. 4th 2000  
Preliminary  
- The copy-back program is configured to quickly and efficiently rewrite  
data stored in one page within the array to another page within the  
same array without utilizing an external memory. Since the time-con  
suming sequently-reading and its re-loading cycles are removed, the  
system performance is improved. The benefit is especially obvious  
when a portion of a block is updated so that the rest of the block also  
need to be copied to the newly assigned free block.  
0.2  
1. Explain how pointer operation works in detail.  
Nov. 20th 2000  
Preliminary  
2. For partial page programming into the copied page  
- Once the copy-back Program is finished, any additional partial page  
programming into the copied pages is prohibited before erase.  
3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)  
- The SE input controls the access of the spare area. When SE is high,  
the spare area is not accessible for reading or programming. SE is rec  
ommended to be coupled to GND or Vcc and should not be toggled  
during reading or programming.  
=> Connect this input pin to GND or set to static low state unless the  
sequential read mode excluding spare area is used.  
4. Updated operation for tRST timing  
- If reset command(FFh) is written at Ready state, the device goes into  
Busy for maximum 5us.  
0.3  
0.4  
1. In addition, explain WE function in pin description  
- The WE must be held high when outputs are activated.  
Mar. 2th 2001  
Jul. 22th 2001  
1.Powerup sequence is added  
: Recovery time of minimum 1ms is required before internal circuit gets  
ready for any command sequences  
~ 2.5V  
~ 2.5V  
VCC  
High  
WP  
WE  
1m  
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.  
3. AC parameter tAR1 value : 100ns --> 20ns  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
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K9F5608U0A-YCB0 替代型号

型号 品牌 替代类型 描述 数据表
K9F5608U0C-PCB0 SAMSUNG

功能相似

 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-YCB0 SAMSUNG

功能相似

 512Mb/256Mb 1.8V NAND Flash Errata

与K9F5608U0A-YCB0相关器件

型号 品牌 获取价格 描述 数据表
K9F5608U0A-YIB0 SAMSUNG

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 		32M x 8 Bit NAND Flash Memory
K9F5608U0B SAMSUNG

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 		32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-DCB0 SAMSUNG

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 		32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-DCB00 SAMSUNG

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 		Flash, 32MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9F5608U0B-DIB0 SAMSUNG

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 		32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-DIB00 SAMSUNG

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 		Flash, 32MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9F5608U0B-FCB0 SAMSUNG

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 		32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-FCB00 SAMSUNG

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 		Flash, 32MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48
K9F5608U0B-FIB0 SAMSUNG

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 		32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-FIB00 SAMSUNG

获取价格

 		Flash, 32MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48

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