Datasheet > K9F5608U0M-

K9F5608U0M-

更新时间： 2024-11-25 22:18:31

品牌	Logo	应用领域
三星 - SAMSUNG		闪存
页数	文件大小	规格书
26页	351K
描述
32M x 8 Bit NAND Flash Memory

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数据手册

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K9F5608U0M- 数据手册

FLASH MEMORY

K9F5608U0M-YCB0,K9F5608U0M-YIB0

Document Title

32M x 8 Bit NAND Flash Memory

Revision History

Revision No. History

Draft Date

Remark

0.0

0.1

0.2

Initial issue.

April. 10th 1999

Advanced

Information

Advanced

Information

Preliminary

Revised real-time map-out algorithm(refer to technical notes)

July. 23th 1999

Sep. 15th 1999

1. Changed device name

i. KM29U256T -> K9F5608U0M-YCB0

ii. KM29U256IT -> K9F5608U0M-YIB0

0.3

1. Changed tWP AC Timing

Mar. 21th 2000

Preliminary

- If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise

tWP may be minimum 25ns.

2. Changed Sequential Row Read operation

- The Sequential Read 1 and 2 operation is allowed only within a block

3. Changed invalid block(s) marking method prior to shipping

- The invalid block(s) information is written the 1st or 2nd page of the

invalid block(s) with 00h data

--->The invalid block(s) status is defined by the 6th byte in the spare

area. Samsung makes sure that either the 1st or 2nd page of every

invalid block has 00h data at the column address of 517.

4. Added a new card-type package : K9S5608U0M-MCB0

0.4

0.5

1. Changed Endurance : 1million -> 100K Program/Erase Cycles

Apr. 7th 2000

Apr. 29th 2000

Preliminary

1. Changed package name

: K9S5608U0M-MCB0 ->K9F5608U0M-MCB0(Micro Flash Card)

2. Changed invalid block(s) marking method prior to shipping

- The invalid block(s) status is defined by the 6th byte in the spare

area. Samsung makes sure that either the 1st or 2nd page of every

invalid block has 00h data at the column address of 517.

--->The invalid block(s) status is defined by the 6th byte in the spare

area. Samsung makes sure that either the 1st or 2nd page of every

invalid block has non-FFh data at the column address of 517.

0.6

0.7

1. Removed Micro Flash Card

2. Changed SE pin description

- SE is recommended to coupled to GND or Vcc and should not be

toggled during reading or programming.

July 17th 2000

Nov. 20th 2000

Final

1. Explain how pointer operation works in detail.

2. Renamed GND input (pin # 6) on behalf of SE (pin # 6)

- The SE input controls the access of the spare area. When SE is high,

the spare area is not accessible for reading or programming. SE is rec

ommended to be coupled to GND or Vcc and should not be toggled

during reading or programming.

=> Connect this input pin to GND or set to static low state unless the

sequential read mode excluding spare area is used.

3. Updated operation for tRST timing

- If reset command(FFh) is written at Ready state, the device goes into

Busy for maximum 5us.

The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have

any questions, please contact the SAMSUNG branch office near you.

12 3 4 5 6 7...26

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与K9F5608U0M-相关器件

型号	品牌	获取价格	描述	数据表
K9F5608U0M-YCB0	SAMSUNG	获取价格	32M x 8 Bit NAND Flash Memory
K9F5608U0M-YIB0	SAMSUNG	获取价格	32M x 8 Bit NAND Flash Memory
K9F5608UOC	SAMSUNG	获取价格	32M x 8 Bit 16M x 16 Bit NAND Flash Memory
K9F5608X0D	SAMSUNG	获取价格	32M x 8 Bit NAND Flash Memory
K9F5608X0D-FCB0	SAMSUNG	获取价格	32M x 8 Bit NAND Flash Memory
K9F5608X0D-FIB0	SAMSUNG	获取价格	32M x 8 Bit NAND Flash Memory
K9F5608X0D-JCB0	SAMSUNG	获取价格	32M x 8 Bit NAND Flash Memory
K9F5608X0D-JIB0	SAMSUNG	获取价格	32M x 8 Bit NAND Flash Memory
K9F5608X0D-PCB0	SAMSUNG	获取价格	32M x 8 Bit NAND Flash Memory
K9F5608X0D-PIB0	SAMSUNG	获取价格	32M x 8 Bit NAND Flash Memory

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