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K9F2816Q0C-BCB0 PDF预览

K9F2816Q0C-BCB0

更新时间: 2024-11-21 19:32:31
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路
页数 文件大小 规格书
33页 691K
描述
Flash, 8MX16, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48

K9F2816Q0C-BCB0 技术参数

生命周期:Active零件包装代码:BGA
包装说明:6 X 8.50 MM, 0.80 MM PITCH, TBGA-48针数:48
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.78
最长访问时间:30 ns其他特性:CONTAINS ADDITIONAL 4M BIT NAND FLASH
JESD-30 代码:R-PBGA-B48长度:8.5 mm
内存密度:134217728 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
端子数量:48字数:8388608 words
字数代码:8000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:8MX16封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:PARALLEL
编程电压:1.8 V认证状态:Not Qualified
座面最大高度:1 mm最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
类型:SLC NAND TYPE宽度:6 mm
Base Number Matches:1

K9F2816Q0C-BCB0 数据手册

 浏览型号K9F2816Q0C-BCB0的Datasheet PDF文件第2页浏览型号K9F2816Q0C-BCB0的Datasheet PDF文件第3页浏览型号K9F2816Q0C-BCB0的Datasheet PDF文件第4页浏览型号K9F2816Q0C-BCB0的Datasheet PDF文件第5页浏览型号K9F2816Q0C-BCB0的Datasheet PDF文件第6页浏览型号K9F2816Q0C-BCB0的Datasheet PDF文件第7页 
K9F2808U0C-VCB0,VIB0  
K9F2808Q0C-BCB0,BIB0 K9F2816Q0C-BCB0,BIB0  
Advance  
K9F2808U0C-YCB0,YIB0 K9F2816U0C-YCB0,YIB0  
K9F2808U0C-BCB0,BIB0 K9F2816U0C-BCB0,BIB0  
FLASH MEMORY  
Document Title  
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Apr. 15th 2002  
Remark  
0.0  
Initial issue.  
Advance  
Note : For more detailed features and specifications including FAQ, please refer to Samsungs Flash web site.  
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1

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