生命周期: | Active | 零件包装代码: | BGA |
包装说明: | 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 | 针数: | 48 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.78 |
最长访问时间: | 30 ns | 其他特性: | CONTAINS ADDITIONAL 4M BIT NAND FLASH |
JESD-30 代码: | R-PBGA-B48 | 长度: | 8.5 mm |
内存密度: | 134217728 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 8388608 words |
字数代码: | 8000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 8MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
编程电压: | 1.8 V | 认证状态: | Not Qualified |
座面最大高度: | 1 mm | 最大供电电压 (Vsup): | 1.95 V |
最小供电电压 (Vsup): | 1.65 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
类型: | SLC NAND TYPE | 宽度: | 6 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K9F2816Q0C-BIB0 | SAMSUNG |
获取价格 |
Flash, 8MX16, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 | |
K9F2816Q0C-DCB0 | SAMSUNG |
获取价格 |
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory | |
K9F2816Q0C-DCB00 | SAMSUNG |
获取价格 |
Flash, 8MX16, 40ns, PBGA63, 9 X 11 MM, 0.80 MM PITCH, TBGA-63 | |
K9F2816Q0C-DIB0 | SAMSUNG |
获取价格 |
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory | |
K9F2816Q0C-DIB00 | SAMSUNG |
获取价格 |
Flash, 8MX16, 40ns, PBGA63, 9 X 11 MM, 0.80 MM PITCH, TBGA-63 | |
K9F2816Q0C-HCB0 | SAMSUNG |
获取价格 |
16M x 8 Bit NAND Flash Memory | |
K9F2816Q0C-HCB0T | SAMSUNG |
获取价格 |
Flash Memory | |
K9F2816Q0C-HIB0 | SAMSUNG |
获取价格 |
16M x 8 Bit NAND Flash Memory | |
K9F2816Q0C-HIB0T | SAMSUNG |
获取价格 |
Flash Memory | |
K9F2816U0C-BCB0 | SAMSUNG |
获取价格 |
Flash, 8MX16, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 |