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K9F2816U0C-HCB0 PDF预览

K9F2816U0C-HCB0

更新时间: 2024-11-24 22:28:31
品牌 Logo 应用领域
三星 - SAMSUNG 闪存存储内存集成电路
页数 文件大小 规格书
31页 775K
描述
16M x 8 Bit NAND Flash Memory

K9F2816U0C-HCB0 技术参数

生命周期:Obsolete包装说明:FBGA, BGA63,10X12,32
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:N最长访问时间:30 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PBGA-B63内存密度:134217728 bit
内存集成电路类型:FLASH内存宽度:16
部门数/规模:1K端子数量:63
字数:8388608 words字数代码:8000000
最高工作温度:70 °C最低工作温度:
组织:8MX16封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA63,10X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
页面大小:256 words并行/串行:PARALLEL
电源:3.3 V认证状态:Not Qualified
就绪/忙碌:YES部门规模:8K
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.02 mA标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
切换位:NO类型:NAND TYPE
Base Number Matches:1

K9F2816U0C-HCB0 数据手册

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FLASH MEMORY  
K9F2808U0C  
Document Title  
16M x 8 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial issue.  
Apr. 15th 2002  
Advance  
1.0  
TBGA PKG Dimension Change  
Sep. 5th 2002  
Advance  
48-Ball, 6.0mm x 8.5mm --> 63-Ball, 9.0mm x 11.0mm  
2.0  
1.A3 Pin assignment of TBGA Package is changed.(Page 4)  
(before) NC --> (after) Vss  
Dec.10th 2002  
Preliminary  
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 32)  
3. Add the data protection Vcc guidence for 1.8V device - below about  
1.1V. (Page 33)  
2.1  
Mar. 6th 2003  
Mar. 13rd 2003  
The min. Vcc value 1.8V devices is changed.  
K9F28XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V  
Pb-free Package is added.  
K9F2808U0C-FCB0,FIB0  
K9F2808Q0C-HCB0,HIB0  
K9F2816U0C-HCB0,HIB0  
K9F2816U0C-PCB0,PIB0  
K9F2816Q0C-HCB0,HIB0  
K9F2808U0C-HCB0,HIB0  
K9F2808U0C-PCB0,PIB0  
2.2  
Some AC parameters are changed(K9F28XXQ0C).  
tWC tWH tWP tRC tREH tRP tREA tCEA  
2.3  
2.4  
Before 45 15 25 50 15 25 30  
After 60 20 40 60 20 40 40  
45  
55  
Mar. 26th 2003  
May. 24th 2003  
1. New definition of the number of invalid blocks is added.  
(Minimum 502 valid blocks are guaranteed for each contiguous 64Mb  
memory space)  
2. Note is added.  
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for  
durations of 20 ns or less.)  
2.5  
2.6  
1. K9F2808U(Q)0C-DC(I)B0,K9F2816U(Q)0C-DC(I)B0 is deleted.  
2. tWC is changed.  
45ns(Before) ---> 50ns(After)  
3. Minimum valid block number is changed.  
1004(Before) --> 1009(After)  
1. Minimum valid block number is changed.  
1009(Before) --> 1004(After)  
Oct. 10th 2003  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
1

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