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K8S2715EBC-SE7E0 PDF预览

K8S2715EBC-SE7E0

更新时间： 2024-01-14 16:47:51
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路
页数 文件大小 规格书
60页 1114K
描述
Flash, PBGA44, 7.70 X 6.20 MM, 0.50 MM PITCH, LEAD FREE, FBGA-44

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K8S2715EBC-SE7E0 技术参数

生命周期：Active零件包装代码：BGA
包装说明：,针数：44
Reach Compliance Code：compliant风险等级：5.66
JESD-30 代码：R-PBGA-B44内存集成电路类型：FLASH
端子数量：44封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：GRID ARRAY
编程电压：1.8 V表面贴装：YES
端子形式：BALL端子位置：BOTTOM
Base Number Matches：1

K8S2715EBC-SE7E0 数据手册

 浏览型号K8S2715EBC-SE7E0的Datasheet PDF文件第2页浏览型号K8S2715EBC-SE7E0的Datasheet PDF文件第3页浏览型号K8S2715EBC-SE7E0的Datasheet PDF文件第4页浏览型号K8S2715EBC-SE7E0的Datasheet PDF文件第6页浏览型号K8S2715EBC-SE7E0的Datasheet PDF文件第7页浏览型号K8S2715EBC-SE7E0的Datasheet PDF文件第8页 
K8S2815ET(B)C  
NOR FLASH MEMORY  
128M Bit (8M x16) Muxed Burst , Multi Bank NOR Flash Memory  
1.1 GENERAL DESCRIPTION  
1.0 FEATURES  
The K8S2815E featuring single 1.8V power supply is a 128Mbit Syn-  
chronous Burst Multi Bank Flash Memory organized as 8Mx16. The  
memory architecture of the device is designed to divide its memory  
arrays into 263 blocks with independent hardware protection. This  
block architecture provides highly flexible erase and program capabil-  
ity. The K8S2815E NOR Flash consists of sixteen banks. This device  
is capable of reading data from one bank while programming or eras-  
ing in the other bank.  
• Single Voltage, 1.7V to 1.95V for Read and Write operations  
• Organization  
- 8,386,108 x 16 bit ( Word Mode Only)  
• Multiplexed Data and Address for reduction of interconnections  
- A/DQ0 ~ A/DQ15  
• Read While Program/Erase Operation  
• Multiple Bank Architecture  
- 16 Banks (8Mb Partition)  
Regarding read access time, the K8S2815E provides an 14.5ns  
burst access time and an 70ns initial access time at 54MHz. At  
66MHz, the K8S2815E provides an 11ns burst access time and 70ns  
initial access time. At 83MHz, the K8S2815E provides an 9ns burst  
access time and 70ns initial access time. At 108MHz, the K8S2815E  
provides an 7ns burst access time and 70ns initial access time. The  
device performs a program operation in units of 16 bits (Word) and an  
erase operation in units of a block. Single or multiple blocks can be  
erased. The block erase operation is completed within typically  
0.7sec. The device requires 15mA as program/erase current in the  
extended temperature ranges.  
• OTP Block : Extra 256-word block  
• Read Access Time (@ CL=30pF)  
- Asynchronous Random Access Time : 70ns  
- Synchronous Random Access Time : 70ns  
- Burst Access Time :  
14.5ns (54MHz) / 11ns (66MHz) / 9ns (83Mhz) / 7ns (108Mhz)  
• Burst Length :  
- Continuous Linear Burst  
- Linear Burst : 8-word & 16-word with Wrap  
• Block Architecture  
- Eight 4Kword blocks and two hundreds fifty-five 32Kword blocks  
The K8S2815E NOR Flash Memory is created by using Samsung's  
advanced CMOS process technology.  
- Bank 0 contains eight 4 Kword blocks and fifteen 32Kword blocks  
- Bank 1 ~ Bank 15 contain two hundred forty 32Kword blocks  
• Reduce program time using the VPP  
• Support Single & Quad word accelerate program  
• Power Consumption (Typical value, CL=30pF)  
- Burst Access Current : 24mA  
- Program/Erase Current : 15mA  
- Read While Program/Erase Current : 40mA  
- Standby Mode/Auto Sleep Mode : 15uA  
• Block Protection/Unprotection  
- Using the software command sequence  
- Last two boot blocks are protected by WP=VIL  
- All blocks are protected by VPP=VIL  
• Handshaking Feature  
- Provides host system with minimum latency by monitoring  
RDY  
• Erase Suspend/Resume  
• Program Suspend/Resume  
• Unlock Bypass Program/Erase  
• Hardware Reset (RESET)  
• Data Polling and Toggle Bits  
- Provides a software method of detecting the status of program  
or erase completion  
• Endurance  
- 100K Program / Erase cycles  
• Extended Temperature : -25°C ~ 85°C  
• Support Common Flash Memory Interface  
• Low Vcc Write Inhibit  
• Package : Package : 44-ball FBGA Type, 7.7 x 6.2mm  
0.5 mm ball pitch  
1.0 mm (Max.) Thickness  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.  
2
Revision 1.2  
November 2008  
12345678...60

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