是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | VFBGA, BGA48,6X8,32 |
针数: | 48 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.84 | 最长访问时间: | 60 ns |
启动块: | BOTTOM/TOP | 命令用户界面: | YES |
通用闪存接口: | YES | 数据轮询: | YES |
JESD-30 代码: | R-PBGA-B48 | 长度: | 8 mm |
内存密度: | 33554432 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 湿度敏感等级: | 3 |
功能数量: | 1 | 部门数/规模: | 16,62 |
端子数量: | 48 | 字数: | 2097152 words |
字数代码: | 2000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 2MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装等效代码: | BGA48,6X8,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
页面大小: | 8 words | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
座面最大高度: | 1 mm | 部门规模: | 4K,32K |
最大待机电流: | 0.00003 A | 子类别: | Flash Memories |
最大压摆率: | 0.055 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL EXTENDED | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
切换位: | YES | 类型: | NOR TYPE |
宽度: | 6 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8P3215UQB-DI4AT | SAMSUNG |
获取价格 |
Flash, 2MX16, 55ns, PBGA48 | |
K8P3215UQB-DI4C0 | SAMSUNG |
获取价格 |
Flash, 2MX16, 65ns, PBGA48, 6 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-48 | |
K8P3215UQB-DI4CT | SAMSUNG |
获取价格 |
Flash, 2MX16, 65ns, PBGA48 | |
K8P3215UQB-DI4DT | SAMSUNG |
获取价格 |
Flash, 2MX16, 70ns, PBGA48 | |
K8P3215UQB-EC4AT | SAMSUNG |
获取价格 |
Flash, 2MX16, 55ns, PBGA64 | |
K8P3215UQB-EE4A0 | SAMSUNG |
获取价格 |
Flash, 2MX16, 55ns, PBGA64, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 | |
K8P3215UQB-EE4B0 | SAMSUNG |
获取价格 |
Flash, 2MX16, 60ns, PBGA64, 13 X 11 MM, 1 MM PITCH, LEAD FREE, FBGA-64 | |
K8P3215UQB-EE4CT | SAMSUNG |
获取价格 |
Flash, 2MX16, 65ns, PBGA64 | |
K8P3215UQB-EI4AT | SAMSUNG |
获取价格 |
Flash, 2MX16, 55ns, PBGA64 | |
K8P3215UQB-EI4CT | SAMSUNG |
获取价格 |
Flash, 2MX16, 65ns, PBGA64 |