Datasheet > K8A2815EBM-TC7C

K8A2815EBM-TC7C

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		/
页数	文件大小	规格书
47页	636K
描述
Flash, 8MX16, 70ns, PBGA64,

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K8A2815EBM-TC7C 数据手册

K8A2815ET(B)M

FLASH MEMORY

Document Title

128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory

Revision History

Revision No. History

Draft Date

Remark

0.0

Preliminary

June 28, 2002

0.1

Revised

September 4, 2002

- Change the "Programmable Wait State" settings in Burst Mode

Configuration Register.(Refer to Table 7.)

- Change the max. Vcc from 1.9V to 1.95V

- Change the part number from K8S28158 to K8S2815E because of

Vcc change.

0.2

0.3

Revised

September 25, 2002

November 2, 2002

- Change the temperature range from Extended Temperature(-25°C ~

85°C) to Industrial Temperature(-40°C ~ 85°C)

- Add the Bottom Boot Block Address Table(Refer to Table 3-2)

- Change the max. of Vpp from 12.5V to 9.5V

Revised

- Change the max. value of "Output Enable to RDY Valid" from 20ns to

the value of tBA(Name is changed from tOE to tOER)

- Add the function of block protect/unprotect in Erase Suspend Mode

- Remove the AC parameter "tCEH"(CE hold time from CLK)

0.4

0.5

Revised

November 19, 2002

December 17, 2002

- Add the AC parameter tWEA(WE Disable to AVD Enable) in command

sequences timing

Revised

- Add the CLK parameters in AC parameter table

- Add the tRDYA in AC parameter table

- Add the Accerelated Chip Erase Time in Erase/Program

Performance table

- Release the tRP from 100ns to 200ns

- Change the default value of "RDY Active" in Burst Mode Configura-

tion Set

0.6

0.7

Revised

March 11, 2003

April 23, 2003

- Change the description of Asynchronous Random Access Time from

"70ns" to "88.5ns(54MHz)/70ns(66MHz)"

- Change the max. of standby current from 25uA to 30uA

Revised

- Change the word boundary size from 64 words to 16 words

- Change the Write Timing (Address latch point : from "AVD rising

edge" to "WE falling edge")

- Remove the "Die revision Information" access in Autoselect Mode

0.8

Revised

Nov 14, 2003

- Change the description of Asynchronous Random Access Time from

"88.5ns(54MHz)" to "90ns(54MHz)"

- Change the typ. of standby current from 5uA to 10uA

- Change the max. of standby current from 30uA to 50uA

Revision 1.0

September, 2004

12 3 4 5 6 7...47

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与K8A2815EBM-TC7C相关器件

型号	品牌	获取价格	描述	数据表
K8A2815EBM-TI7B	SAMSUNG	获取价格	Flash, 8MX16, 90ns, PBGA64,
K8A2815ETE	SAMSUNG	获取价格	128Mb E-die NOR FLASH
K8A2815ETM-LC7C	SAMSUNG	获取价格	Flash, 8MX16, 70ns, PBGA64,
K8A2815ETM-LI7C	SAMSUNG	获取价格	Flash, 8MX16, 70ns, PBGA64,
K8A2815ETM-TI7B	SAMSUNG	获取价格	Flash, 8MX16, 90ns, PBGA64,
K8A2815ETM-TI7C	SAMSUNG	获取价格	Flash, 8MX16, 70ns, PBGA64,
K8A3215EBE-DC7B	SAMSUNG	获取价格	Flash, 2MX16, 90ns, LEAD FREE, FBGA
K8A3215EBE-DC7BT	SAMSUNG	获取价格	Flash Memory
K8A3215EBE-DC7C	SAMSUNG	获取价格	Flash, 2MX16, 80ns, LEAD FREE, FBGA
K8A3215EBE-DC7C0	SAMSUNG	获取价格	Flash Memory