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K7N803645A-PC15 PDF预览

K7N803645A-PC15

更新时间: 2024-11-23 20:57:11
品牌 Logo 应用领域
三星 - SAMSUNG 时钟静态存储器内存集成电路
页数 文件大小 规格书
20页 459K
描述
ZBT SRAM, 256KX36, 3.8ns, CMOS, PQFP100

K7N803645A-PC15 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:QFP, QFP100,.63X.87Reach Compliance Code:compliant
风险等级:5.8最长访问时间:3.8 ns
最大时钟频率 (fCLK):150 MHzI/O 类型:COMMON
JESD-30 代码:R-PQFP-G100内存密度:9437184 bit
内存集成电路类型:ZBT SRAM内存宽度:36
端子数量:100字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
电源:2.5 V认证状态:Not Qualified
最大待机电流:0.04 A最小待机电流:2.38 V
子类别:SRAMs最大压摆率:0.35 mA
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.635 mm
端子位置:QUADBase Number Matches:1

K7N803645A-PC15 数据手册

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K7N803645A  
K7N801845A  
PRELIMINARY  
256Kx36 & 512Kx18 Pipelined NtRAMTM  
Document Title  
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM  
Revision History  
History  
Rev.No.  
Draft Date  
Remark  
1. Initial document.  
0.0  
May. 24. 2000  
Preliminary  
Add 119BGA(7x17 Ball Grid Array Package)  
0.1  
July. 03. 2000  
Preliminary  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
July 2000  
Rev 0.1  

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