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K7N803645B-QC16T PDF预览

K7N803645B-QC16T

更新时间: 2024-09-28 12:59:19
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路静态存储器
页数 文件大小 规格书
18页 379K
描述
ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100

K7N803645B-QC16T 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:QFP, QFP100,.63X.87
Reach Compliance Code:unknown风险等级:5.92
最长访问时间:3.5 ns最大时钟频率 (fCLK):167 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
内存密度:9437184 bit内存集成电路类型:ZBT SRAM
内存宽度:36湿度敏感等级:1
端子数量:100字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX36输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:QFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:2.5 V
认证状态:Not Qualified最大待机电流:0.06 A
最小待机电流:2.38 V子类别:SRAMs
最大压摆率:0.33 mA标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.635 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

K7N803645B-QC16T 数据手册

 浏览型号K7N803645B-QC16T的Datasheet PDF文件第2页浏览型号K7N803645B-QC16T的Datasheet PDF文件第3页浏览型号K7N803645B-QC16T的Datasheet PDF文件第4页浏览型号K7N803645B-QC16T的Datasheet PDF文件第5页浏览型号K7N803645B-QC16T的Datasheet PDF文件第6页浏览型号K7N803645B-QC16T的Datasheet PDF文件第7页 
K7N803601B  
K7N801801B  
256Kx36 & 512Kx18 Pipelined NtRAMTM  
Document Title  
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
0.1  
0.2  
1.0  
1. Initial document.  
May. 18. 2001  
Aug. 11. 2001  
Aug. 28 .2001  
Nov. 16. 2001  
Preliminary  
Preliminary  
Preliminary  
Final  
1. Add x32 org part and industrial temperature part  
1. change scan order(1) form 4T to 6T at 119BGA(x18)  
1. Final spec release  
2. Change ISB2 form 50mA to 60mA  
Change ordering information( remove 225MHz at Nt-Pipelined)  
1. Delete 119BGA package  
2.0  
2.1  
3.0  
April. 01. 2002  
April. 04. 2003  
Nov. 17. 2003  
Final  
Final  
Final  
1. Remove x32 organization  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
Nov. 2003  
Rev 3.0  

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