Datasheet > K7J321882M-FC20

K7J321882M-FC20

更新时间： 2024-01-24 15:54:19

品牌	Logo	应用领域
三星 - SAMSUNG		时钟双倍数据速率静态存储器内存集成电路
页数	文件大小	规格书
18页	178K
描述
DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

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技术参数
数据手册

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K7J321882M-FC20 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

K7J321882M-FC20 数据手册

K7J323682M

K7J321882M

K7J320882M

Preliminary

1Mx36 & 2Mx18 & 4Mx8 DDR II SIO b2 SRAM

Document Title

1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDR II SIO b2 SRAM

Revision History

Draft Date

Remark

Rev. No.

History

Advance

Preliminary

July, 15 200 1

Dec, 14 2001

0.0

1. Initial document.

0.1

1. Pin name change from DLL to Doff

2. Update JTAG test conditions.

3. Reserved pin for high density name change from NC to Vss/SA

4. Delete AC test condition about Clock Input timing Reference Level

5. Delete clock description on page 2 and add HSTL I/O comment

6. Deleted R/W control pin description on page 2

Preliminary

July, 29. 2002

Sep. 6. 2002

Oct. 7. 2002

0.2

0.3

0.4

1. Update current characteristics in DC electrical characteristics

2. Change AC timing characteristics

3. Update JTAG instruction coding and diagrams

1. Add AC electrical characteristics.

2. Change AC timing characteristics.

3. Change DC electrical characteristics(ISB1)

1. Change the data Setup/Hold time.

2. Change the Access Time.(tCHQV, tCHQX, etc.)

3. Change the Clock Cycle Time.(MAX value of tKHKH)

4. Change the JTAG instruction coding.

Preliminary

Dec. 16, 2002

Dec. 26, 2002

0.5

0.6

1. Change the Boundary scan exit order.

2. Change the AC timing characteristics(-25, -20)

3. Correct the Overshoot and Undershoot timing diagrams.

1. Change the JTAG Block diagram

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Dec. 2002

Rev 0.6

- 1 -

12 3 4 5 6 7...18

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与K7J321882M-FC20相关器件

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K7J321882M-FC200	SAMSUNG	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165	获取价格
K7J321882M-FC20T	SAMSUNG	SRAM	获取价格
K7J321882M-FC25	SAMSUNG	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165	获取价格
K7J321882M-FC250	SAMSUNG	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165	获取价格
K7J321882M-FC25T	SAMSUNG	SRAM	获取价格
K7J321882M-FI250	SAMSUNG	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165	获取价格