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K7I321882C-EI30T PDF预览

K7I321882C-EI30T

更新时间: 2024-11-24 19:05:07
品牌 Logo 应用领域
三星 - SAMSUNG 时钟静态存储器内存集成电路
页数 文件大小 规格书
18页 413K
描述
Standard SRAM, 2MX18, 0.45ns, CMOS, PBGA165

K7I321882C-EI30T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:BGA, BGA165,11X15,40
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:0.45 ns最大时钟频率 (fCLK):300 MHz
I/O 类型:COMMONJESD-30 代码:R-PBGA-B165
JESD-609代码:e1内存密度:37748736 bit
内存集成电路类型:STANDARD SRAM内存宽度:18
湿度敏感等级:3端子数量:165
字数:2097152 words字数代码:2000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:2MX18
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA165,11X15,40
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:1.5/1.8,1.8 V认证状态:Not Qualified
最大待机电流:0.28 A最小待机电流:1.7 V
子类别:SRAMs最大压摆率:0.65 mA
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
Base Number Matches:1

K7I321882C-EI30T 数据手册

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K7I323682C  
K7I321882C  
1Mx36 & 2Mx18 DDRII CIO b2 SRAM  
36Mb DDRII SRAM Specification  
165 FBGA with Pb & Pb-Free  
(RoHS compliant)  
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,  
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.  
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,  
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,  
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.  
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED  
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.  
1. For updates or additional information about Samsung products, contact your nearest Samsung office.  
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-  
lar applications where Product failure could result in loss of life or personal or physical harm, or any military  
or defense application, or any governmental procurement to which special terms or provisions may apply.  
* Samsung Electronics reserves the right to change products or specification without notice.  
Rev. 1.1 August 2006  
- 1 -  

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