Datasheet > K7I321882M-FC13

K7I321882M-FC13

更新时间： 2024-11-24 14:43:03

品牌	Logo	应用领域
三星 - SAMSUNG		双倍数据速率静态存储器
页数	文件大小	规格书
18页	181K
描述
DDR SRAM, 2MX18, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

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中文翻译

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技术参数
数据手册

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K7I321882M-FC13 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	LBGA,	针数：	165
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

K7I321882M-FC13 数据手册

K7I323682M

K7I321882M

K7I320882M

Preliminary

1Mx36 & 2Mx18 & 4Mx8 DDRII CIO b2 SRAM

Document Title

1Mx36-bit, 2Mx18-bit, 4Mx8-bit DDRII CIO b2 SRAM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

1. Initial document.

Advance

Preliminary

October, 22 2001

December, 12 2001

0.1

1. Pin name change from DLL to Doff.

2. Vddq range change from 1.5V to 1.5V~1.8V.

3. Update JTAG test conditions.

4. Reserved pin for high density name change from NC to Vss/SA

5. Delete AC test condition about Clock Input timing Reference Level

6. Delete clock description on page 2 and add HSTL I/O comment

0.2

0.3

0.4

1. Update current characteristics in DC electrical characteristics

2. Change AC timing characteristics

Preliminary

July, 29. 2002

Sep. 6. 2002

Oct. 7. 2002

3. Update JTAG instruction coding and diagrams

1. Add AC electrical characteristics.

2. Change AC timing characteristics.

3. Change DC electrical characteristics(ISB1)

1. Change the data Setup/Hold time.

2. Change the Access Time.(tCHQV, tCHQX, etc.)

3. Change the Clock Cycle Time.(MAX value of tKHKH)

4. Change the JTAG instruction coding.

0.5

1. Change the Boundary scan exit order.

Preliminary

Dec. 16, 2002

2. Change the AC timing characteristics(-25, -20)

3. Correct the Overshoot and Undershoot timing diagrams.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Dec. 2002

Rev 0.5

- 1 -

12 3 4 5 6 7...18

中文翻译

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与K7I321882M-FC13相关器件

型号	品牌	获取价格	描述	数据表
K7I321882M-FC16	SAMSUNG	获取价格	DDR SRAM, 2MX18, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
K7I321882M-FC160	SAMSUNG	获取价格	DDR SRAM, 2MX18, 0.5ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
K7I321882M-FC200	SAMSUNG	获取价格	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
K7I321882M-FC25	SAMSUNG	获取价格	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
K7I321882M-FC250	SAMSUNG	获取价格	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
K7I321882M-FC270	SAMSUNG	获取价格	DDR SRAM, 2MX18, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
K7I321882M-FI250	SAMSUNG	获取价格	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165
K7I321884C	SAMSUNG	获取价格	1Mx36 & 2Mx18 DDRII CIO b4 SRAM
K7I321884C-EC250	SAMSUNG	获取价格	DDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165
K7I321884C-EC30	SAMSUNG	获取价格	Standard SRAM, 2MX18, 0.45ns, CMOS, PBGA165

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