生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | LBGA, | 针数: | 165 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.84 |
最长访问时间: | 2.8 ns | 其他特性: | PIPELINED ARCHITECTURE |
JESD-30 代码: | R-PBGA-B165 | 长度: | 17 mm |
内存密度: | 37748736 bit | 内存集成电路类型: | CACHE SRAM |
内存宽度: | 36 | 功能数量: | 1 |
端子数量: | 165 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 1MX36 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, LOW PROFILE | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 座面最大高度: | 1.4 mm |
最大供电电压 (Vsup): | 3.465 V | 最小供电电压 (Vsup): | 3.135 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 宽度: | 15 mm |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K7A323600M-HC140 | SAMSUNG |
获取价格 |
Cache SRAM, 1MX36, 4ns, CMOS, PBGA119, BGA-119 |
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K7A323600M-HC16 | SAMSUNG |
获取价格 |
Cache SRAM, 1MX36, 3.5ns, CMOS, PBGA119, BGA-119 |
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K7A323600M-HC20 | SAMSUNG |
获取价格 |
Cache SRAM, 1MX36, 3.1ns, CMOS, PBGA119, BGA-119 |
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K7A323600M-HC200 | SAMSUNG |
获取价格 |
Cache SRAM, 1MX36, 3.1ns, CMOS, PBGA119, BGA-119 |
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K7A323600M-HI150 | SAMSUNG |
获取价格 |
Cache SRAM, 1MX36, 3.8ns, CMOS, PBGA119, BGA-119 |
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K7A323600M-HI200 | SAMSUNG |
获取价格 |
Cache SRAM, 1MX36, 3.1ns, CMOS, PBGA119, BGA-119 |
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K7A323600M-HI220 | SAMSUNG |
获取价格 |
Cache SRAM, 1MX36, 2.8ns, CMOS, PBGA119, BGA-119 |
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K7A323600M-QC14 | SAMSUNG |
获取价格 |
1Mx36 & 2Mx18 Synchronous SRAM |
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K7A323600M-QC140 | SAMSUNG |
获取价格 |
Cache SRAM, 1MX36, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 |
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K7A323600M-QC20 | SAMSUNG |
获取价格 |
1Mx36 & 2Mx18 Synchronous SRAM |
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