Datasheet > K6X1008C2D-GQ700

K6X1008C2D-GQ700

更新时间： 2024-01-04 12:46:26

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
10页	122K
描述
Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 0.525 INCH, PLASTIC, SOP-32

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K6X1008C2D-GQ700 数据手册

K6X1008C2D Family

CMOS SRAM

Document Title

128Kx8 bit Low Power CMOS Static RAM

Revision History

Revision No. History

Draft Data

Remark

0.0

Initial draft

July 15, 2002

Preliminary

0.1

Revised

December 4, 2002

Preliminary

- Deleted 32-TSOP1-0820R Package Type.

- Added Commercial product.

0.2

0.3

1.0

Revised

May 13, 2003

Preliminary

Final

- Added Lead Free 32-SOP-525 Product

Revised

June 21, 2003

- Added Lead Free 32-TSOP1-0820F Product

Finalized

September 16, 2003

- Changed ICC from 10mA to 5mA

- Changed ICC2 from 35mA to 25mA

- Changed ISB from 3mA to 0.4mA

- Changed IDR(industrial) from 15µA to 10µA

- Changed IDR(Automotive) from 25µA to 20µA

2.0

3.0

Revised

July 15, 2004

Final

- Changed ISB1 of Automotive product from 25µA to 30µA

- Deleted 55ns Automotive product

Revised

March 27, 2005

- Changed ISB1 of Automotive product from 30µA to 50µA

- Changed IDR of Automotive product from 20µA to 25µA

- Added Lead Free Products

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.

Revision 3.0

March 2005

12 3 4 5 6 7...10

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