Datasheet > K6X0808T1D-BF700

K6X0808T1D-BF700

更新时间： 2024-02-19 22:32:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	110K
描述
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.450 INCH, LEAD FREE, PLASTIC, SOP-28

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K6X0808T1D-BF700 数据手册

K6X0808T1D Family

CMOS SRAM

RECOMMENDED DC OPERATING CONDITIONS¹⁾

Item

Symbol

Vcc

Min

2.7

Typ

Max

3.6

Unit

Supply voltage

Ground

3.0/3.3

Vss

Vcc+0.2²⁾

0.6

Input high voltage

Input low voltage

Note:

VIH

2.2

-0.2³⁾

VIL

1. Industrial Product: T^A=-40 to 85°C, Otherwise specified

Automotive Product: TA=-40 to 125°C, Otherwise specified

2. Overshoot: Vcc+3.0V in case of pulse width≤30ns.

3. Undershoot: -3.0V in case of pulse width≤30ns.

4. Overshoot and undershoot are sampled, not 100% tested.

CAPACITANCE¹⁾(f=1MHz, TA=25°C)

Item

Input capacitance

Symbol

CIN

Test Condition

VIN=0V

Min

Max

Unit

Input/Output capacitance

CIO

VIO=0V

1. Capacitance is sampled, not 100% tested

DC AND OPERATING CHARACTERISTICS

Item

Symbol

ILI

Test Conditions

Min Typ Max Unit

Input leakage current

VIN=Vss to Vcc

-1

µA

Output leakage current

Operating power supply current

ILO

CS=VIH or OE=VIH or WE=VIL, VIO=VSS to Vcc

IIO=0mA, CS=VIL, VIN=VIH or VIL, Read

ICC

Cycle time=1µs, 100% duty, IIO=0mA, CS≤0.2V,

VIN≤0.2VIN≥Vcc -0.2V

ICC1

ICC2

Average operating current

Cycle time=Min,100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL

20 mA

Output low voltage

Output high voltage

Standby Current(TTL)

VOL

VOH

ISB

IOL=2.1mA

0.4

IOH=-1.0mA

2.4

CS=VIH, Other inputs=VIH or VIL

0.3 mA

µA

K6X0808T1D-F

K6X0808T1D-Q

Standby Current(CMOS)

ISB1

CS≥Vcc-0.2V, Other inputs=0~Vcc

25 µA

Revision 2.0

March 2005

1 2 345 6 7...9

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