Datasheet > K6X0808T1D-BF700

K6X0808T1D-BF700

更新时间： 2024-02-13 23:16:30

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	110K
描述
Standard SRAM, 32KX8, 70ns, CMOS, PDSO28, 0.450 INCH, LEAD FREE, PLASTIC, SOP-28

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K6X0808T1D-BF700 数据手册

K6X0808T1D Family

CMOS SRAM

Document Title

32Kx8 bit Low Power CMOS Static RAM

Revision History

Revision No. History

Draft Data

Remark

0.0

Initial draft

October 09, 2002

Preliminary

0.1

revised

November 08, 2002

Preliminary

- errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type

0.2

1.0

revised

- Added commercial product.

March 27, 2003

Preliminary

Final

Finalized

December 16, 2003

- Changed ICC from 3mA to 2mA

- Changed ICC2 from 25mA to 20mA

- Changed ISB from 3mA to 0.4mA

- Changed ISB1 for K6X0808T1D-F from 10µA to 6µA

- Changed ISB1 for K6X0808T1D-F from 20µA to 10µA

- Changed IDR for K6X0808T1D-F 10µA to 6µA

- Changed IDR for K6X0808T1D-Q 20µA to 10µA

- Errata correction

2.0

Revised

March 27, 2005

Final

- Changed ISB1 of Automotive product from 10µA to 25µA

- Changed IDR of Automotive product from 10µA to 25µA

- Added Lead Free Products

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserves the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.

Revision 2.0

March 2005

12 3 4 5 6 7...9

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