Datasheet > K6T2016S3M-TF12

K6T2016S3M-TF12

更新时间： 2024-02-05 10:37:12

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
9页	131K
描述
Standard SRAM, 128KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

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K6T2016S3M-TF12 技术参数

K6T2016S3M Family

CMOS SRAM

Document Title

128K x16 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No. History

Draft Data

Remark

0.0

1.0

Initial Draft

October 1, 1997

August 27, 1998

Preliminary

Finalize

Final

- Change operation voltage:

Vcc=2.3~3.3V ® Vcc=2.3~2.7V

- Release operating current

ICC=2mA ® 5mA

ICC1 Read/Write=3/15mA ® 5/20mA

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.0

August 1998

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
K6T2016U3M-TB10	SAMSUNG	获取价格	Standard SRAM, 128KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T2016U3M-TB85	SAMSUNG	获取价格	Standard SRAM, 128KX16, 85ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T2016U3M-TB850	SAMSUNG	获取价格	Standard SRAM, 128KX16, 85ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T2016U3M-TF10	SAMSUNG	获取价格	Standard SRAM, 128KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T2016U3M-TF100	SAMSUNG	获取价格	Standard SRAM, 128KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T2016U3M-TF85	SAMSUNG	获取价格	Standard SRAM, 128KX16, 85ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T2016U3M-TF850	SAMSUNG	获取价格	Standard SRAM, 128KX16, 85ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T4008C	SAMSUNG	获取价格	512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B	SAMSUNG	获取价格	512Kx8 bit Low Power CMOS Static RAM
K6T4008C1B-B	SAMSUNG	获取价格	512Kx8 bit Low Power CMOS Static RAM