Datasheet > K6T2008V2M-TF85T

K6T2008V2M-TF85T

更新时间： 2023-07-15 00:00:00

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K6T2008V2M-TF85T 数据手册

K6T2008V2M, K6T2008U2M Family

CMOS SRAM

Document Title

256Kx8 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No. History

Draft Data

Remark

0.0

0.1

1.0

Design target

Initial draft

January 30, 1997

April 7, 1997

Advance

Preliminary

Final

Finalize

November 27, 1997

- Improved VIL(Min.) : 0.4V ® 0.6V

- Erase reverse type package

- Change speed bin

KM68V2000 : 70/85ns

KM68V2000I, KM68U2000, KM68U2000I : 85/100ns

- Improved standby current

Commercial product : 15mA ® 10mA

Industrial product : 30mA ® 15mA

- Increased Power dissipation : 0.7W ® 1.0W

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.0

November 1997

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
K6T2008V2M-YB70	SAMSUNG	获取价格	Standard SRAM, 256KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32
K6T2008V2M-YF10	SAMSUNG	获取价格	Standard SRAM, 256KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32
K6T2008V2M-YF10T	SAMSUNG	获取价格	Standard SRAM, 256KX8, 100ns, CMOS, PDSO32
K6T2008V2M-YF850	SAMSUNG	获取价格	Standard SRAM, 256KX8, 85ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32
K6T2008V2M-YF85T	SAMSUNG	获取价格	Standard SRAM, 256KX8, 85ns, CMOS, PDSO32
K6T2016S3M-TB12	SAMSUNG	获取价格	Standard SRAM, 128KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T2016S3M-TF12	SAMSUNG	获取价格	Standard SRAM, 128KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T2016U3M-TB10	SAMSUNG	获取价格	Standard SRAM, 128KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T2016U3M-TB85	SAMSUNG	获取价格	Standard SRAM, 128KX16, 85ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
K6T2016U3M-TB850	SAMSUNG	获取价格	Standard SRAM, 128KX16, 85ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44