是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TSOP1 | 包装说明: | TSOP1-R, |
针数: | 32 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.41 |
风险等级: | 5.89 | 最长访问时间: | 100 ns |
JESD-30 代码: | R-PDSO-G32 | 长度: | 18.4 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
组织: | 128KX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP1-R | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | DUAL | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K6T1008V2C-RD70 | SAMSUNG |
获取价格 |
128K x8 bit Low Power and Low Voltage CMOS Static RAM | |
K6T1008V2C-RF10 | SAMSUNG |
获取价格 |
128K x8 bit Low Power and Low Voltage CMOS Static RAM | |
K6T1008V2C-RF70 | SAMSUNG |
获取价格 |
128K x8 bit Low Power and Low Voltage CMOS Static RAM | |
K6T1008V2C-RF700 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 8 X 13.40 MM, REVERSE, TSOP1-32 | |
K6T1008V2C-TB10 | SAMSUNG |
获取价格 |
128K x8 bit Low Power and Low Voltage CMOS Static RAM | |
K6T1008V2C-TB100 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 | |
K6T1008V2C-TB70 | SAMSUNG |
获取价格 |
128K x8 bit Low Power and Low Voltage CMOS Static RAM | |
K6T1008V2C-TD10 | SAMSUNG |
获取价格 |
128K x8 bit Low Power and Low Voltage CMOS Static RAM | |
K6T1008V2C-TD70 | SAMSUNG |
获取价格 |
128K x8 bit Low Power and Low Voltage CMOS Static RAM | |
K6T1008V2C-TD700 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX8, 70ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32 |